JPS5466073A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5466073A
JPS5466073A JP13273677A JP13273677A JPS5466073A JP S5466073 A JPS5466073 A JP S5466073A JP 13273677 A JP13273677 A JP 13273677A JP 13273677 A JP13273677 A JP 13273677A JP S5466073 A JPS5466073 A JP S5466073A
Authority
JP
Japan
Prior art keywords
center
cooling body
semiconductor
stress
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13273677A
Other languages
Japanese (ja)
Inventor
Shigeru Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13273677A priority Critical patent/JPS5466073A/en
Publication of JPS5466073A publication Critical patent/JPS5466073A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE: To attain the reduction in cost, minimum increase in thermal resistance, reduction in heat fatigue, and improvement in reliability by providing a protrusion with its peak near the center of a semiconductor element and right under the semiconductor element to a cooling body.
CONSTITUTION: To cooling body 201 of the mounted semiconductor device, protruding part 204 is provided which has its top near the center of and right under semiconductor 202, and this element 202 is coated with soldering material 203 thin around the center of element 202 and thick around its circumference. In this constitution, the thickness of soldering material 203 is thick at the edge of element 202, where shearing stress is largest, and thin near the center of element 202, where stress absorption effect is great and the temperature is easy to rise, adjoining to cooling body 201, so that the seliconductor device can be obtained which is under a little influence of thermal stress because of excellent radiation characteristics, and has a little thermal resistance.
COPYRIGHT: (C)1979,JPO&Japio
JP13273677A 1977-11-04 1977-11-04 Semiconductor device Pending JPS5466073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13273677A JPS5466073A (en) 1977-11-04 1977-11-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13273677A JPS5466073A (en) 1977-11-04 1977-11-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5466073A true JPS5466073A (en) 1979-05-28

Family

ID=15088385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13273677A Pending JPS5466073A (en) 1977-11-04 1977-11-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5466073A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583237A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Semiconductor device
JPS60163739U (en) * 1984-04-05 1985-10-30 三洋電機株式会社 semiconductor equipment
JP2011054732A (en) * 2009-09-01 2011-03-17 Toyota Motor Corp Semiconductor module
JP2011159994A (en) * 2011-04-12 2011-08-18 Fuji Electric Co Ltd Semiconductor device
JP2013123016A (en) * 2011-12-12 2013-06-20 Denso Corp Semiconductor device
JP2014093356A (en) * 2012-11-01 2014-05-19 Toyota Motor Corp Semiconductor device
JP2016105508A (en) * 2016-02-29 2016-06-09 株式会社三社電機製作所 Semiconductor device
WO2016093262A1 (en) * 2014-12-11 2016-06-16 株式会社フジクラ Optical module
JP2020009995A (en) * 2018-07-12 2020-01-16 三菱電機株式会社 Semiconductor device, power conversion apparatus and manufacturing method for semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583237A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Semiconductor device
JPS60163739U (en) * 1984-04-05 1985-10-30 三洋電機株式会社 semiconductor equipment
JP2011054732A (en) * 2009-09-01 2011-03-17 Toyota Motor Corp Semiconductor module
JP2011159994A (en) * 2011-04-12 2011-08-18 Fuji Electric Co Ltd Semiconductor device
JP2013123016A (en) * 2011-12-12 2013-06-20 Denso Corp Semiconductor device
JP2014093356A (en) * 2012-11-01 2014-05-19 Toyota Motor Corp Semiconductor device
WO2016093262A1 (en) * 2014-12-11 2016-06-16 株式会社フジクラ Optical module
JP2016105508A (en) * 2016-02-29 2016-06-09 株式会社三社電機製作所 Semiconductor device
JP2020009995A (en) * 2018-07-12 2020-01-16 三菱電機株式会社 Semiconductor device, power conversion apparatus and manufacturing method for semiconductor device

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