JPS5465486A - Two-way thyristor switch element - Google Patents

Two-way thyristor switch element

Info

Publication number
JPS5465486A
JPS5465486A JP13157877A JP13157877A JPS5465486A JP S5465486 A JPS5465486 A JP S5465486A JP 13157877 A JP13157877 A JP 13157877A JP 13157877 A JP13157877 A JP 13157877A JP S5465486 A JPS5465486 A JP S5465486A
Authority
JP
Japan
Prior art keywords
scr
terminals
vgp
alpha1
alpha2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13157877A
Other languages
Japanese (ja)
Other versions
JPS612306B2 (en
Inventor
Tetsuo Ito
Akio Sagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13157877A priority Critical patent/JPS5465486A/en
Publication of JPS5465486A publication Critical patent/JPS5465486A/en
Publication of JPS612306B2 publication Critical patent/JPS612306B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To enhance the anti-noise performance of the SCR element by lowering the current transmission rate between two anodes in the structure of two-way SCR. CONSTITUTION:Two SCR's are formed as prescribed using the N-type base substrate in common and then combined in two ways. Then anode terminals 18 and 19, cathode terminals 20 and 22 plus gate terminals 21 and 23 are installed respectively, and resistance 24 and 25 are connected between the gate and cathode terminal. The carrier injected from P-emitter 33 of element 26 flows to the emitters of the 2nd P-layer and element 27 in transmission ratio alpha1 and alpha2. Base current IB26 flowing through the PNP part of lamp function voltage application element 26 features the sum the transient current of the capacity of junction 32 and that of the PNP part of element 27, and IB26 xalpha1/(1-alpha1) flows to the PNP part of element 26 to produce voltage drop VGP at resistance 28. With approximation of the anode region, alpha2 increases with increment of IB26 and VGP. Thus, the anti-noise performance is lowered.
JP13157877A 1977-11-04 1977-11-04 Two-way thyristor switch element Granted JPS5465486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13157877A JPS5465486A (en) 1977-11-04 1977-11-04 Two-way thyristor switch element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13157877A JPS5465486A (en) 1977-11-04 1977-11-04 Two-way thyristor switch element

Publications (2)

Publication Number Publication Date
JPS5465486A true JPS5465486A (en) 1979-05-26
JPS612306B2 JPS612306B2 (en) 1986-01-23

Family

ID=15061318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13157877A Granted JPS5465486A (en) 1977-11-04 1977-11-04 Two-way thyristor switch element

Country Status (1)

Country Link
JP (1) JPS5465486A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH042127Y2 (en) * 1985-08-02 1992-01-24

Also Published As

Publication number Publication date
JPS612306B2 (en) 1986-01-23

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