JPS546510B2 - - Google Patents

Info

Publication number
JPS546510B2
JPS546510B2 JP9407376A JP9407376A JPS546510B2 JP S546510 B2 JPS546510 B2 JP S546510B2 JP 9407376 A JP9407376 A JP 9407376A JP 9407376 A JP9407376 A JP 9407376A JP S546510 B2 JPS546510 B2 JP S546510B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9407376A
Other languages
Japanese (ja)
Other versions
JPS5242479A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7524770A external-priority patent/FR2321326A1/fr
Priority claimed from FR7622863A external-priority patent/FR2359639A2/fr
Application filed filed Critical
Publication of JPS5242479A publication Critical patent/JPS5242479A/ja
Publication of JPS546510B2 publication Critical patent/JPS546510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002Continuous growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08Downward pulling
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP9407376A 1975-08-08 1976-08-09 Continuous fabrication of determineddform single crystals and apparatus therefor Granted JPS5242479A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7524770A FR2321326A1 (fr) 1975-08-08 1975-08-08 Procede de fabrication en continu de monocristaux preformes
FR7622863A FR2359639A2 (fr) 1976-07-27 1976-07-27 Dispositif pour fabriquer des tubes et des ensembles de petits cylindres monocristallins

Publications (2)

Publication Number Publication Date
JPS5242479A JPS5242479A (en) 1977-04-02
JPS546510B2 true JPS546510B2 (US20080094685A1-20080424-C00004.png) 1979-03-29

Family

ID=26219025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9407376A Granted JPS5242479A (en) 1975-08-08 1976-08-09 Continuous fabrication of determineddform single crystals and apparatus therefor

Country Status (5)

Country Link
JP (1) JPS5242479A (US20080094685A1-20080424-C00004.png)
CH (1) CH612596A5 (US20080094685A1-20080424-C00004.png)
DE (1) DE2635373C2 (US20080094685A1-20080424-C00004.png)
GB (1) GB1546843A (US20080094685A1-20080424-C00004.png)
IT (1) IT1069679B (US20080094685A1-20080424-C00004.png)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2528454A1 (fr) * 1982-06-11 1983-12-16 Criceram Creuset modifie pour la methode de cristallisation par goutte pendante
DE4323793A1 (de) * 1993-07-15 1995-01-19 Wacker Chemitronic Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung
ATE156264T1 (de) * 1994-07-08 1997-08-15 Heraeus Electro Nite Int Vorrichtung zur messung der oberflächenspannung
DE4423720C1 (de) * 1994-07-08 1996-02-01 Heraeus Electro Nite Int Vorrichtung zur Messung der Oberflächenspannung
TW200510581A (en) * 2003-07-17 2005-03-16 Stella Chemifa Corp Method for producing crystal of fluoride
US7691199B2 (en) 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
JP5195301B2 (ja) * 2008-10-31 2013-05-08 Tdk株式会社 単結晶引下げ装置
JP2021172796A (ja) * 2020-04-30 2021-11-01 Tdk株式会社 単結晶蛍光体および結晶体の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113568A (en) * 1974-07-24 1976-02-03 Hitachi Ltd Handotaiketsushono seizohohooyobi seizosochi

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1134967B (de) * 1954-03-02 1962-08-23 Siemens Ag Verfahren zum Ziehen eines stabfoermigen kristallinen Halbleiterkoerpers
DE1204837B (de) * 1961-08-21 1965-11-11 Merck & Co Inc Verfahren zur kontinuierlichen Herstellung von Staeben aus thermoelektrischen Werkstoffen
US3249404A (en) * 1963-02-20 1966-05-03 Merck & Co Inc Continuous growth of crystalline materials
US3765843A (en) * 1971-07-01 1973-10-16 Tyco Laboratories Inc Growth of tubular crystalline bodies
US3801309A (en) * 1971-11-08 1974-04-02 Tyco Laboratories Inc Production of eutectic bodies by unidirectional solidification

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113568A (en) * 1974-07-24 1976-02-03 Hitachi Ltd Handotaiketsushono seizohohooyobi seizosochi

Also Published As

Publication number Publication date
JPS5242479A (en) 1977-04-02
IT1069679B (it) 1985-03-25
CH612596A5 (en) 1979-08-15
GB1546843A (en) 1979-05-31
DE2635373C2 (de) 1982-04-15
DE2635373A1 (de) 1977-04-21

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