JPS545938B2 - - Google Patents

Info

Publication number
JPS545938B2
JPS545938B2 JP8828572A JP8828572A JPS545938B2 JP S545938 B2 JPS545938 B2 JP S545938B2 JP 8828572 A JP8828572 A JP 8828572A JP 8828572 A JP8828572 A JP 8828572A JP S545938 B2 JPS545938 B2 JP S545938B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8828572A
Other versions
JPS4845145A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4845145A publication Critical patent/JPS4845145A/ja
Publication of JPS545938B2 publication Critical patent/JPS545938B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP8828572A 1971-10-04 1972-09-02 Expired JPS545938B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18636171A 1971-10-04 1971-10-04

Publications (2)

Publication Number Publication Date
JPS4845145A JPS4845145A (ja) 1973-06-28
JPS545938B2 true JPS545938B2 (ja) 1979-03-23

Family

ID=22684640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8828572A Expired JPS545938B2 (ja) 1971-10-04 1972-09-02

Country Status (7)

Country Link
US (1) US3744037A (ja)
JP (1) JPS545938B2 (ja)
CA (1) CA975463A (ja)
DE (1) DE2247553B2 (ja)
FR (1) FR2156564B1 (ja)
GB (1) GB1369724A (ja)
IT (1) IT961693B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5043847A (ja) * 1973-08-21 1975-04-19
JPS512360A (ja) * 1974-06-24 1976-01-09 Mitsubishi Electric Corp
DE2441385C3 (de) * 1974-08-29 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Vergrößern des Lesesignals bei einem Ein- Transistor-Speicherelement
CH609200B (fr) * 1975-08-08 Ebauches Sa Dispositif pour maintenir dans un etat determine le potentiel electrique d'un point d'un circuit electronique.
US4139785A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static memory cell with inverted field effect transistor
US4308594A (en) * 1980-01-31 1981-12-29 Mostek Corporation MOS Memory cell
US6078513A (en) * 1999-06-09 2000-06-20 Neomagic Corp. NMOS dynamic content-addressable-memory CAM cell with self-booting pass transistors and local row and column select
US9449692B2 (en) * 2011-08-03 2016-09-20 Micron Technology, Inc. Functional data programming and reading in a memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1256068A (en) * 1967-12-07 1971-12-08 Plessey Co Ltd Improvements in or relating to logic circuit arrangements
US3581292A (en) * 1969-01-07 1971-05-25 North American Rockwell Read/write memory circuit
US3591836A (en) * 1969-03-04 1971-07-06 North American Rockwell Field effect conditionally switched capacitor
US3582909A (en) * 1969-03-07 1971-06-01 North American Rockwell Ratioless memory circuit using conditionally switched capacitor

Also Published As

Publication number Publication date
US3744037A (en) 1973-07-03
CA975463A (en) 1975-09-30
FR2156564A1 (ja) 1973-06-01
GB1369724A (en) 1974-10-09
JPS4845145A (ja) 1973-06-28
FR2156564B1 (ja) 1974-08-19
IT961693B (it) 1973-12-10
DE2247553A1 (de) 1973-04-19
DE2247553B2 (de) 1975-08-28

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