JPS5458351A - Device for depositing semiconductor material - Google Patents

Device for depositing semiconductor material

Info

Publication number
JPS5458351A
JPS5458351A JP11986978A JP11986978A JPS5458351A JP S5458351 A JPS5458351 A JP S5458351A JP 11986978 A JP11986978 A JP 11986978A JP 11986978 A JP11986978 A JP 11986978A JP S5458351 A JPS5458351 A JP S5458351A
Authority
JP
Japan
Prior art keywords
semiconductor material
depositing semiconductor
depositing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11986978A
Other languages
English (en)
Japanese (ja)
Inventor
Ruhia Ururitsuhi
Barousukii Geruharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5458351A publication Critical patent/JPS5458351A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP11986978A 1977-09-29 1978-09-28 Device for depositing semiconductor material Pending JPS5458351A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772743856 DE2743856A1 (de) 1977-09-29 1977-09-29 Verfahren und vorrichtung zum abscheiden von halbleitermaterial

Publications (1)

Publication Number Publication Date
JPS5458351A true JPS5458351A (en) 1979-05-11

Family

ID=6020225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11986978A Pending JPS5458351A (en) 1977-09-29 1978-09-28 Device for depositing semiconductor material

Country Status (3)

Country Link
JP (1) JPS5458351A (US20090163788A1-20090625-C00002.png)
DE (1) DE2743856A1 (US20090163788A1-20090625-C00002.png)
IT (1) IT1098966B (US20090163788A1-20090625-C00002.png)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4681652A (en) * 1980-06-05 1987-07-21 Rogers Leo C Manufacture of polycrystalline silicon

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966067A (US20090163788A1-20090625-C00002.png) * 1972-10-30 1974-06-26
JPS5239073B1 (US20090163788A1-20090625-C00002.png) * 1961-07-24 1977-10-03

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1221612B (de) * 1962-09-15 1966-07-28 Siemens Ag Vorrichtung zum Konstanthalten der Temperatur eines bei einer pyrolitischen Zersetzung einer Halbleiterverbindung benutzten Traegers
GB1209580A (en) * 1969-03-17 1970-10-21 Hamco Mach & Elect Co Automatic control for crystal growing apparatus
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5239073B1 (US20090163788A1-20090625-C00002.png) * 1961-07-24 1977-10-03
JPS4966067A (US20090163788A1-20090625-C00002.png) * 1972-10-30 1974-06-26

Also Published As

Publication number Publication date
DE2743856C2 (US20090163788A1-20090625-C00002.png) 1987-03-05
IT7828176A0 (it) 1978-09-28
DE2743856A1 (de) 1979-04-12
IT1098966B (it) 1985-09-18

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