JPS5458350A - Device for depositing semiconductor material - Google Patents

Device for depositing semiconductor material

Info

Publication number
JPS5458350A
JPS5458350A JP11986878A JP11986878A JPS5458350A JP S5458350 A JPS5458350 A JP S5458350A JP 11986878 A JP11986878 A JP 11986878A JP 11986878 A JP11986878 A JP 11986878A JP S5458350 A JPS5458350 A JP S5458350A
Authority
JP
Japan
Prior art keywords
semiconductor material
depositing semiconductor
depositing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11986878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5639048B2 (US20110232667A1-20110929-C00004.png
Inventor
Ruhia Ururitsuhi
Barousukii Geruharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5458350A publication Critical patent/JPS5458350A/ja
Publication of JPS5639048B2 publication Critical patent/JPS5639048B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP11986878A 1977-09-29 1978-09-28 Device for depositing semiconductor material Granted JPS5458350A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2743950A DE2743950C2 (de) 1977-09-29 1977-09-29 Vorrichtung zum Abscheiden von Halbleitermaterial

Publications (2)

Publication Number Publication Date
JPS5458350A true JPS5458350A (en) 1979-05-11
JPS5639048B2 JPS5639048B2 (US20110232667A1-20110929-C00004.png) 1981-09-10

Family

ID=6020264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11986878A Granted JPS5458350A (en) 1977-09-29 1978-09-28 Device for depositing semiconductor material

Country Status (7)

Country Link
JP (1) JPS5458350A (US20110232667A1-20110929-C00004.png)
BR (1) BR7806432A (US20110232667A1-20110929-C00004.png)
DE (1) DE2743950C2 (US20110232667A1-20110929-C00004.png)
IN (1) IN149401B (US20110232667A1-20110929-C00004.png)
IT (1) IT1099206B (US20110232667A1-20110929-C00004.png)
PL (1) PL115365B1 (US20110232667A1-20110929-C00004.png)
SU (1) SU810086A3 (US20110232667A1-20110929-C00004.png)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57155724A (en) * 1981-02-27 1982-09-25 Heraeus Schott Quarzschmelze Quartz material exhaust gas bell for isolating synthetic silicon
JPH0239525A (ja) * 1988-07-29 1990-02-08 Hitachi Ltd 半導体熱処理装置
US8613358B2 (en) 2010-03-18 2013-12-24 Jong Soo Park Structure for detachable coupling of containers
US9656782B2 (en) 2010-03-18 2017-05-23 Jong Soo Park Structure for detachable coupling of containers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1221612B (de) * 1962-09-15 1966-07-28 Siemens Ag Vorrichtung zum Konstanthalten der Temperatur eines bei einer pyrolitischen Zersetzung einer Halbleiterverbindung benutzten Traegers
GB1209580A (en) * 1969-03-17 1970-10-21 Hamco Mach & Elect Co Automatic control for crystal growing apparatus
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57155724A (en) * 1981-02-27 1982-09-25 Heraeus Schott Quarzschmelze Quartz material exhaust gas bell for isolating synthetic silicon
JPH0239088B2 (US20110232667A1-20110929-C00004.png) * 1981-02-27 1990-09-04 Hereusu Kuarutsushumerutsue Gmbh
JPH0239525A (ja) * 1988-07-29 1990-02-08 Hitachi Ltd 半導体熱処理装置
US8613358B2 (en) 2010-03-18 2013-12-24 Jong Soo Park Structure for detachable coupling of containers
US9656782B2 (en) 2010-03-18 2017-05-23 Jong Soo Park Structure for detachable coupling of containers

Also Published As

Publication number Publication date
JPS5639048B2 (US20110232667A1-20110929-C00004.png) 1981-09-10
IT1099206B (it) 1985-09-18
SU810086A3 (ru) 1981-02-28
PL209746A1 (pl) 1979-06-04
DE2743950C2 (de) 1987-02-12
PL115365B1 (en) 1981-03-31
IN149401B (US20110232667A1-20110929-C00004.png) 1981-11-28
DE2743950A1 (de) 1979-04-12
BR7806432A (pt) 1979-05-08
IT7828167A0 (it) 1978-09-28

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