JPS5456365A - Glass sealed type semiconductor device - Google Patents
Glass sealed type semiconductor deviceInfo
- Publication number
- JPS5456365A JPS5456365A JP12237677A JP12237677A JPS5456365A JP S5456365 A JPS5456365 A JP S5456365A JP 12237677 A JP12237677 A JP 12237677A JP 12237677 A JP12237677 A JP 12237677A JP S5456365 A JPS5456365 A JP S5456365A
- Authority
- JP
- Japan
- Prior art keywords
- lead wires
- studs
- copper layer
- thick copper
- cores
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
PURPOSE: To reduce bends of lead wires, make bonding of studs and lead wires sure, reduce thermal resistance and make possible the use under high voltage by so constructing the lead wires that iron wire base cores are covered with a sufficiently thick copper layer.
CONSTITUTION: In the glass sealed semiconductor device comprising sealing a semiconductor element 1 by a glass tube 3 in the state of being held between two studs 2 and leading out lead wires 4 from the respectice studs 2, the lead wires 4 are so constructed that their iron wire base cores 5 are covered with a sufficiently thick copper layer 6. And the ratio of the iron wire base core 5 and the thick copper layer 6 to cover in the construction of said lead wires 4 is made 1:2. A wire of iron base of low heat conductivity is employed for the cores 5 of the lead wires 4 so that welding heat by resistacne welding is made liable to be evolved and the bonding between the studs 2 and lead wires 4 is made sure
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12237677A JPS5456365A (en) | 1977-10-14 | 1977-10-14 | Glass sealed type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12237677A JPS5456365A (en) | 1977-10-14 | 1977-10-14 | Glass sealed type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5456365A true JPS5456365A (en) | 1979-05-07 |
Family
ID=14834297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12237677A Pending JPS5456365A (en) | 1977-10-14 | 1977-10-14 | Glass sealed type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5456365A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5596665A (en) * | 1979-01-19 | 1980-07-23 | Totoku Electric Co Ltd | Lead component for semiconductor element |
JPS5821361A (en) * | 1981-07-29 | 1983-02-08 | Nec Home Electronics Ltd | Diode |
-
1977
- 1977-10-14 JP JP12237677A patent/JPS5456365A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5596665A (en) * | 1979-01-19 | 1980-07-23 | Totoku Electric Co Ltd | Lead component for semiconductor element |
JPS5821361A (en) * | 1981-07-29 | 1983-02-08 | Nec Home Electronics Ltd | Diode |
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