JPS5453877A - Temperature compensation circuit of semiconductor strain gauge - Google Patents
Temperature compensation circuit of semiconductor strain gaugeInfo
- Publication number
- JPS5453877A JPS5453877A JP11991677A JP11991677A JPS5453877A JP S5453877 A JPS5453877 A JP S5453877A JP 11991677 A JP11991677 A JP 11991677A JP 11991677 A JP11991677 A JP 11991677A JP S5453877 A JPS5453877 A JP S5453877A
- Authority
- JP
- Japan
- Prior art keywords
- strain gauge
- compensation circuit
- temperature
- temperature compensation
- semiconductor strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000007935 neutral effect Effects 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2268—Arrangements for correcting or for compensating unwanted effects
- G01L1/2281—Arrangements for correcting or for compensating unwanted effects for temperature variations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11991677A JPS5453877A (en) | 1977-10-07 | 1977-10-07 | Temperature compensation circuit of semiconductor strain gauge |
US05/948,778 US4173148A (en) | 1977-10-07 | 1978-10-05 | Semiconductor strain gauge with temperature compensator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11991677A JPS5453877A (en) | 1977-10-07 | 1977-10-07 | Temperature compensation circuit of semiconductor strain gauge |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15873281A Division JPS57103027A (en) | 1981-10-07 | 1981-10-07 | Semiconductor transducer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5453877A true JPS5453877A (en) | 1979-04-27 |
JPS6142876B2 JPS6142876B2 (en, 2012) | 1986-09-24 |
Family
ID=14773354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11991677A Granted JPS5453877A (en) | 1977-10-07 | 1977-10-07 | Temperature compensation circuit of semiconductor strain gauge |
Country Status (2)
Country | Link |
---|---|
US (1) | US4173148A (en, 2012) |
JP (1) | JPS5453877A (en, 2012) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57103027A (en) * | 1981-10-07 | 1982-06-26 | Hitachi Ltd | Semiconductor transducer |
JPS58123780A (ja) * | 1982-01-20 | 1983-07-23 | Hitachi Ltd | 半導体ストレインゲ−ジトランスジユ−サ |
JPS59184819A (ja) * | 1983-04-06 | 1984-10-20 | Hitachi Ltd | 半導体圧力センサ |
JP2002527767A (ja) * | 1998-10-21 | 2002-08-27 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | ブリッジ回路内に接続されている圧抵抗性測定抵抗の特性曲線の温度非線形性補償のための回路装置 |
CN106227285A (zh) * | 2015-06-02 | 2016-12-14 | 精工半导体有限公司 | 温度补偿电路及传感器装置 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4299130A (en) * | 1979-10-22 | 1981-11-10 | Gould Inc. | Thin film strain gage apparatus with unstrained temperature compensation resistances |
USRE32631E (en) * | 1984-03-12 | 1988-03-29 | Frazier Precision Instrument Company, Inc. | Measurement circuit for load cell |
JPH0797010B2 (ja) * | 1986-03-26 | 1995-10-18 | 株式会社日立製作所 | 半導体歪ゲ−ジブリツジ回路 |
US4807151A (en) * | 1986-04-11 | 1989-02-21 | Purdue Research Foundation | Electrical technique for correcting bridge type mass air flow rate sensor errors resulting from ambient temperature variations |
JPH0691265B2 (ja) * | 1986-08-01 | 1994-11-14 | 株式会社日立製作所 | 半導体圧力センサ |
DE3772514D1 (de) * | 1986-10-28 | 1991-10-02 | Sumitomo Electric Industries | Messverfahren fuer einen halbleiter-druckmessfuehler. |
US4809536A (en) * | 1986-11-06 | 1989-03-07 | Sumitomo Electric Industries, Ltd. | Method of adjusting bridge circuit of semiconductor pressure sensor |
US5431064A (en) * | 1992-09-18 | 1995-07-11 | Home Row, Inc. | Transducer array |
CA2203658A1 (en) * | 1994-10-27 | 1996-05-09 | Randy John Brunn | Mixing apparatus |
DE19825761C2 (de) * | 1998-06-09 | 2001-02-08 | Fraunhofer Ges Forschung | Vorrichtung zum Erfassen einer Dehnung und/oder einer Stauchung eines Körpers |
GB2370122B (en) * | 2000-12-16 | 2005-04-27 | Senstronics Ltd | Temperature compensated strain gauge |
US20090255736A1 (en) * | 2006-09-05 | 2009-10-15 | Kazufumi Naito | Load cell unit, weight checker, electronic balance, and balance |
RU2507476C1 (ru) * | 2012-07-03 | 2014-02-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" | Способ настройки тензорезисторных датчиков с мостовой измерительной цепью по мультипликативной температурной погрешности с учетом положительной нелинейности температурной характеристики выходного сигнала датчика |
RU2507477C1 (ru) * | 2012-07-03 | 2014-02-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" | Способ настройки тензорезисторных датчиков с мостовой измерительной цепью по мультипликативной температурной погрешности с учетом положительной нелинейности температурной характеристики выходного сигнала датчика |
RU2507475C1 (ru) * | 2012-07-03 | 2014-02-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" | Способ настройки тензорезисторных датчиков с мостовой измерительной цепью по мультипликативной температурной погрешности с учетом положительной нелинейности температурной характеристики выходного сигнала датчика |
RU2506534C1 (ru) * | 2012-07-20 | 2014-02-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" | Способ настройки тензорезисторных датчиков с мостовой измерительной цепью по мультипликативной температурной погрешности с учетом положительной нелинейности температурной характеристики выходного сигнала датчика |
RU2539816C1 (ru) * | 2013-07-23 | 2015-01-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет | Косвенный способ настройки тензорезисторных датчиков с мостовой измерительной цепью по мультипликативной температурной погрешности с учетом отрицательной нелинейности температурной характеристики выходного сигнала датчика |
RU2542611C1 (ru) * | 2013-07-23 | 2015-02-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" | Косвенный способ настройки тензорезисторных датчиков с мостовой измерительной цепью по мультипликативной температурной погрешности с учетом отрицательной нелинейности температурной характеристики выходного сигнала датчика |
DE102015222756A1 (de) | 2015-11-18 | 2017-05-18 | Robert Bosch Gmbh | Sensorelement für einen Drucksensor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2801388A (en) * | 1953-09-15 | 1957-07-30 | Baldwin Lima Hamilton Corp | Extensometer with adjustable temperature compensation |
US3161821A (en) * | 1962-07-02 | 1964-12-15 | Statham Instrument Inc | Wheatstone bridge transducer circuits with external balancing means |
-
1977
- 1977-10-07 JP JP11991677A patent/JPS5453877A/ja active Granted
-
1978
- 1978-10-05 US US05/948,778 patent/US4173148A/en not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57103027A (en) * | 1981-10-07 | 1982-06-26 | Hitachi Ltd | Semiconductor transducer |
JPS58123780A (ja) * | 1982-01-20 | 1983-07-23 | Hitachi Ltd | 半導体ストレインゲ−ジトランスジユ−サ |
JPS59184819A (ja) * | 1983-04-06 | 1984-10-20 | Hitachi Ltd | 半導体圧力センサ |
JP2002527767A (ja) * | 1998-10-21 | 2002-08-27 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | ブリッジ回路内に接続されている圧抵抗性測定抵抗の特性曲線の温度非線形性補償のための回路装置 |
CN106227285A (zh) * | 2015-06-02 | 2016-12-14 | 精工半导体有限公司 | 温度补偿电路及传感器装置 |
Also Published As
Publication number | Publication date |
---|---|
US4173148A (en) | 1979-11-06 |
JPS6142876B2 (en, 2012) | 1986-09-24 |
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