JPS5452481A - Heterojunction avalanche diode - Google Patents

Heterojunction avalanche diode

Info

Publication number
JPS5452481A
JPS5452481A JP9138078A JP9138078A JPS5452481A JP S5452481 A JPS5452481 A JP S5452481A JP 9138078 A JP9138078 A JP 9138078A JP 9138078 A JP9138078 A JP 9138078A JP S5452481 A JPS5452481 A JP S5452481A
Authority
JP
Japan
Prior art keywords
avalanche diode
heterojunction avalanche
heterojunction
diode
avalanche
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9138078A
Other languages
English (en)
Japanese (ja)
Inventor
Dorajiyuboodofu Danieru
Pearusaru Tooma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS5452481A publication Critical patent/JPS5452481A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/40—Transit-time diodes, e.g. IMPATT or TRAPATT diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
JP9138078A 1977-08-02 1978-07-26 Heterojunction avalanche diode Pending JPS5452481A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7723779A FR2399740A1 (fr) 1977-08-02 1977-08-02 Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode

Publications (1)

Publication Number Publication Date
JPS5452481A true JPS5452481A (en) 1979-04-25

Family

ID=9194131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9138078A Pending JPS5452481A (en) 1977-08-02 1978-07-26 Heterojunction avalanche diode

Country Status (6)

Country Link
US (1) US4186407A (cg-RX-API-DMAC7.html)
JP (1) JPS5452481A (cg-RX-API-DMAC7.html)
CA (1) CA1104265A (cg-RX-API-DMAC7.html)
DE (1) DE2833543A1 (cg-RX-API-DMAC7.html)
FR (1) FR2399740A1 (cg-RX-API-DMAC7.html)
GB (1) GB2002579B (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2447612A1 (fr) * 1979-01-26 1980-08-22 Thomson Csf Composant semi-conducteur a heterojonction
US4250516A (en) * 1979-08-06 1981-02-10 Bell Telephone Laboratories, Incorporated Multistage avalanche photodetector
US4291320A (en) * 1980-01-10 1981-09-22 Rockwell International Corporation Heterojunction IMPATT diode
US4353081A (en) * 1980-01-29 1982-10-05 Bell Telephone Laboratories, Incorporated Graded bandgap rectifying semiconductor devices
FR2476944A1 (fr) * 1980-02-21 1981-08-28 Bois Daniel Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
US4319937A (en) * 1980-11-12 1982-03-16 University Of Illinois Foundation Homogeneous liquid phase epitaxial growth of heterojunction materials
US4468851A (en) * 1981-12-14 1984-09-04 The United States Of America As Represented By The Secretary Of The Navy Process for making a heterojunction source-drain insulated gate field-effect transistors utilizing diffusion to form the lattice
JPS63153867A (ja) * 1986-08-04 1988-06-27 Fujitsu Ltd 共鳴トンネリング半導体装置
FR2689683B1 (fr) * 1992-04-07 1994-05-20 Thomson Composants Microondes Dispositif semiconducteur a transistors complementaires.
GB9823115D0 (en) * 1998-10-23 1998-12-16 Secr Defence Improvements in impatt diodes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466512A (en) * 1967-05-29 1969-09-09 Bell Telephone Labor Inc Impact avalanche transit time diodes with heterojunction structure
US3982261A (en) * 1972-09-22 1976-09-21 Varian Associates Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices
FR2225842B1 (cg-RX-API-DMAC7.html) * 1973-04-13 1977-09-02 Thomson Csf
US4017332A (en) * 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
JPS52101990A (en) * 1976-02-21 1977-08-26 Hitachi Ltd Semiconductor device for photoelectric transducer and its manufacture
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers

Also Published As

Publication number Publication date
FR2399740A1 (fr) 1979-03-02
FR2399740B1 (cg-RX-API-DMAC7.html) 1982-02-26
GB2002579A (en) 1979-02-21
GB2002579B (en) 1982-05-19
US4186407A (en) 1980-01-29
DE2833543A1 (de) 1979-02-15
CA1104265A (en) 1981-06-30

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