JPS5443686A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS5443686A JPS5443686A JP10992277A JP10992277A JPS5443686A JP S5443686 A JPS5443686 A JP S5443686A JP 10992277 A JP10992277 A JP 10992277A JP 10992277 A JP10992277 A JP 10992277A JP S5443686 A JPS5443686 A JP S5443686A
- Authority
- JP
- Japan
- Prior art keywords
- area
- gate
- type emitter
- opposite
- short
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002950 deficient Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10992277A JPS5443686A (en) | 1977-09-14 | 1977-09-14 | Thyristor |
US05/941,588 US4210924A (en) | 1977-09-14 | 1978-09-12 | Semiconductor controlled rectifier with configured cathode to eliminate hot-spots |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10992277A JPS5443686A (en) | 1977-09-14 | 1977-09-14 | Thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5443686A true JPS5443686A (en) | 1979-04-06 |
JPS5751269B2 JPS5751269B2 (ja) | 1982-11-01 |
Family
ID=14522519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10992277A Granted JPS5443686A (en) | 1977-09-14 | 1977-09-14 | Thyristor |
Country Status (2)
Country | Link |
---|---|
US (1) | US4210924A (ja) |
JP (1) | JPS5443686A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS574159A (en) * | 1980-06-09 | 1982-01-09 | Hitachi Ltd | Thyristor |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CS208929B1 (en) * | 1977-08-23 | 1981-10-30 | Jaroslav Homola | Multilayer semiconductor device |
JPS60243425A (ja) * | 1984-05-18 | 1985-12-03 | Matsushita Electric Ind Co Ltd | 石油燃焼器 |
DE3769188D1 (de) * | 1986-03-05 | 1991-05-16 | Siemens Ag | Thyristor mit einstellbarem basis-emitter-widerstand. |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5169374A (ja) * | 1974-12-13 | 1976-06-15 | Kogyo Gijutsuin | Handotaiseigyoseiryusoshi |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE758745A (fr) * | 1969-11-10 | 1971-05-10 | Westinghouse Electric Corp | Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs |
BE787241A (fr) * | 1971-08-06 | 1973-02-05 | Siemens Ag | Thyristor |
JPS541437B2 (ja) * | 1973-04-18 | 1979-01-24 | ||
JPS5927108B2 (ja) * | 1975-02-07 | 1984-07-03 | 株式会社日立製作所 | 半導体制御整流装置 |
JPS51142983A (en) * | 1975-06-04 | 1976-12-08 | Hitachi Ltd | Scr |
-
1977
- 1977-09-14 JP JP10992277A patent/JPS5443686A/ja active Granted
-
1978
- 1978-09-12 US US05/941,588 patent/US4210924A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5169374A (ja) * | 1974-12-13 | 1976-06-15 | Kogyo Gijutsuin | Handotaiseigyoseiryusoshi |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS574159A (en) * | 1980-06-09 | 1982-01-09 | Hitachi Ltd | Thyristor |
Also Published As
Publication number | Publication date |
---|---|
JPS5751269B2 (ja) | 1982-11-01 |
US4210924A (en) | 1980-07-01 |
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