JPS5435686A - Field effect semiconductor device of junction type - Google Patents

Field effect semiconductor device of junction type

Info

Publication number
JPS5435686A
JPS5435686A JP10242677A JP10242677A JPS5435686A JP S5435686 A JPS5435686 A JP S5435686A JP 10242677 A JP10242677 A JP 10242677A JP 10242677 A JP10242677 A JP 10242677A JP S5435686 A JPS5435686 A JP S5435686A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
junction type
effect semiconductor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10242677A
Other languages
English (en)
Other versions
JPS5830742B2 (ja
Inventor
Toyoki Takemoto
Tadanaka Yoneda
Haruyasu Yamada
Michihiro Inoue
Hideaki Sadamatsu
Toshiki Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP52102426A priority Critical patent/JPS5830742B2/ja
Publication of JPS5435686A publication Critical patent/JPS5435686A/ja
Publication of JPS5830742B2 publication Critical patent/JPS5830742B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP52102426A 1977-08-25 1977-08-25 接合形電界効果半導体装置 Expired JPS5830742B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52102426A JPS5830742B2 (ja) 1977-08-25 1977-08-25 接合形電界効果半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52102426A JPS5830742B2 (ja) 1977-08-25 1977-08-25 接合形電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS5435686A true JPS5435686A (en) 1979-03-15
JPS5830742B2 JPS5830742B2 (ja) 1983-07-01

Family

ID=14327121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52102426A Expired JPS5830742B2 (ja) 1977-08-25 1977-08-25 接合形電界効果半導体装置

Country Status (1)

Country Link
JP (1) JPS5830742B2 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108275A (en) * 1980-01-31 1981-08-27 Mitsubishi Electric Corp Field effect transistor
JPS5772386A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Junction type field-effect semiconductor device
JPS5889872A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd 接合形電界効果半導体装置
JP2006086548A (ja) * 2005-12-12 2006-03-30 Nissan Motor Co Ltd 電界効果トランジスタ
JP2006086549A (ja) * 2005-12-12 2006-03-30 Nissan Motor Co Ltd 電界効果トランジスタ及びその製造方法
JP2020181991A (ja) * 2015-01-14 2020-11-05 ハイペリオン セミコンダクターズ オサケユイチア 導体・絶縁体・半導体電界効果トランジスタ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49123289A (ja) * 1973-03-28 1974-11-26
JPS50115780A (ja) * 1974-02-22 1975-09-10
JPS5124874A (ja) * 1974-08-23 1976-02-28 Nippon Telegraph & Telephone Setsugogatadenkaikokatoranjisuta
JPS5230179A (en) * 1975-09-01 1977-03-07 Nec Corp Junction-type electric field effective transistor
JPS52100877A (en) * 1976-02-19 1977-08-24 Sony Corp Field effect transistor of junction type

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49123289A (ja) * 1973-03-28 1974-11-26
JPS50115780A (ja) * 1974-02-22 1975-09-10
JPS5124874A (ja) * 1974-08-23 1976-02-28 Nippon Telegraph & Telephone Setsugogatadenkaikokatoranjisuta
JPS5230179A (en) * 1975-09-01 1977-03-07 Nec Corp Junction-type electric field effective transistor
JPS52100877A (en) * 1976-02-19 1977-08-24 Sony Corp Field effect transistor of junction type

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108275A (en) * 1980-01-31 1981-08-27 Mitsubishi Electric Corp Field effect transistor
JPS5772386A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Junction type field-effect semiconductor device
JPS5889872A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd 接合形電界効果半導体装置
JP2006086548A (ja) * 2005-12-12 2006-03-30 Nissan Motor Co Ltd 電界効果トランジスタ
JP2006086549A (ja) * 2005-12-12 2006-03-30 Nissan Motor Co Ltd 電界効果トランジスタ及びその製造方法
JP2020181991A (ja) * 2015-01-14 2020-11-05 ハイペリオン セミコンダクターズ オサケユイチア 導体・絶縁体・半導体電界効果トランジスタ
CN112151617A (zh) * 2015-01-14 2020-12-29 海伯利安半导体公司 导体绝缘体半导体场效应晶体管
US11283450B2 (en) 2015-01-14 2022-03-22 Hyperion Semiconductors Oy Semiconductor logic element and a logic circuitry

Also Published As

Publication number Publication date
JPS5830742B2 (ja) 1983-07-01

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