JPS5432437B1 - - Google Patents

Info

Publication number
JPS5432437B1
JPS5432437B1 JP3251572A JP3251572A JPS5432437B1 JP S5432437 B1 JPS5432437 B1 JP S5432437B1 JP 3251572 A JP3251572 A JP 3251572A JP 3251572 A JP3251572 A JP 3251572A JP S5432437 B1 JPS5432437 B1 JP S5432437B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3251572A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5432437B1 publication Critical patent/JPS5432437B1/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/20Heating of the molten zone by induction, e.g. hot wire technique
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP3251572A 1971-03-31 1972-03-31 Pending JPS5432437B1 (ref)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712115650 DE2115650C3 (de) 1971-03-31 1971-03-31 Verfahren zum Herstellen von einkristallinem Silicium

Publications (1)

Publication Number Publication Date
JPS5432437B1 true JPS5432437B1 (ref) 1979-10-15

Family

ID=5803427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3251572A Pending JPS5432437B1 (ref) 1971-03-31 1972-03-31

Country Status (10)

Country Link
JP (1) JPS5432437B1 (ref)
BE (1) BE781581A (ref)
CA (1) CA966763A (ref)
CH (1) CH584569A5 (ref)
DE (1) DE2115650C3 (ref)
DK (1) DK134665C (ref)
FR (1) FR2132176B1 (ref)
GB (1) GB1332272A (ref)
IT (1) IT959577B (ref)
NL (1) NL7114423A (ref)

Also Published As

Publication number Publication date
BE781581A (fr) 1972-07-17
NL7114423A (ref) 1972-10-03
DE2115650A1 (de) 1972-10-12
GB1332272A (en) 1973-10-03
CH584569A5 (ref) 1977-02-15
DE2115650C3 (de) 1980-01-17
DK134665B (da) 1976-12-20
FR2132176B1 (ref) 1974-08-02
DK134665C (da) 1977-05-23
IT959577B (it) 1973-11-10
FR2132176A1 (ref) 1972-11-17
CA966763A (en) 1975-04-29
DE2115650B2 (de) 1979-05-23

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