JPS5431872B2 - - Google Patents

Info

Publication number
JPS5431872B2
JPS5431872B2 JP10210074A JP10210074A JPS5431872B2 JP S5431872 B2 JPS5431872 B2 JP S5431872B2 JP 10210074 A JP10210074 A JP 10210074A JP 10210074 A JP10210074 A JP 10210074A JP S5431872 B2 JPS5431872 B2 JP S5431872B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10210074A
Other versions
JPS5129880A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10210074A priority Critical patent/JPS5431872B2/ja
Publication of JPS5129880A publication Critical patent/JPS5129880A/ja
Priority to US06/050,202 priority patent/US4260430A/en
Publication of JPS5431872B2 publication Critical patent/JPS5431872B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)
JP10210074A 1974-09-06 1974-09-06 Expired JPS5431872B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10210074A JPS5431872B2 (ja) 1974-09-06 1974-09-06
US06/050,202 US4260430A (en) 1974-09-06 1979-06-20 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10210074A JPS5431872B2 (ja) 1974-09-06 1974-09-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6897779A Division JPS5511396A (en) 1979-06-04 1979-06-04 Production method of semiconductor integrated circuit system

Publications (2)

Publication Number Publication Date
JPS5129880A JPS5129880A (ja) 1976-03-13
JPS5431872B2 true JPS5431872B2 (ja) 1979-10-09

Family

ID=14318355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10210074A Expired JPS5431872B2 (ja) 1974-09-06 1974-09-06

Country Status (2)

Country Link
US (1) US4260430A (ja)
JP (1) JPS5431872B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649656Y2 (ja) * 1979-10-01 1981-11-19

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52132785A (en) * 1976-04-30 1977-11-07 Mitsubishi Electric Corp Semiconductor integrating circuit
JPS52138882A (en) * 1976-05-14 1977-11-19 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS53121484A (en) * 1977-03-30 1978-10-23 Mitsubishi Electric Corp Semiconductor logic circuit device of electrostatic induction type
IT1213216B (it) * 1984-09-10 1989-12-14 Ates Componenti Elettron Invertitore logico a porta in tecnica iil perfezionato eprocedimento per la sua fabbricazione.
JPH03203095A (ja) * 1989-12-28 1991-09-04 Texas Instr Japan Ltd 半導体記憶装置
JPH07235602A (ja) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp Ｉｉｌ回路を有する半導体装置およびその製造方法
US5607867A (en) * 1994-07-15 1997-03-04 Texas Instruments Incorporated Method of forming a controlled low collector breakdown voltage transistor for ESD protection circuits

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113584A (ja) * 1974-07-24 1976-02-03 Tokyo Shibaura Electric Co

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR155459A (ja) * 1967-01-23
US3764396A (en) * 1969-09-18 1973-10-09 Kogyo Gijutsuin Transistors and production thereof
US3879230A (en) * 1970-02-07 1975-04-22 Tokyo Shibaura Electric Co Semiconductor device diffusion source containing as impurities AS and P or B
NL7107040A (ja) * 1971-05-22 1972-11-24
US3961340A (en) * 1971-11-22 1976-06-01 U.S. Philips Corporation Integrated circuit having bipolar transistors and method of manufacturing said circuit
GB1388926A (en) * 1972-03-04 1975-03-26 Ferranti Ltd Manufacture of silicon semiconductor devices
US3756861A (en) * 1972-03-13 1973-09-04 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US3895390A (en) * 1972-11-24 1975-07-15 Signetics Corp Metal oxide semiconductor structure and method using ion implantation
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
US3793093A (en) * 1973-01-12 1974-02-19 Handotai Kenkyu Shinkokai Method for producing a semiconductor device having a very small deviation in lattice constant
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
US3971059A (en) * 1974-09-23 1976-07-20 National Semiconductor Corporation Complementary bipolar transistors having collector diffused isolation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113584A (ja) * 1974-07-24 1976-02-03 Tokyo Shibaura Electric Co

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649656Y2 (ja) * 1979-10-01 1981-11-19

Also Published As

Publication number Publication date
US4260430A (en) 1981-04-07
JPS5129880A (ja) 1976-03-13

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