JPS5426674A - Electrode material for semiconductor device - Google Patents

Electrode material for semiconductor device

Info

Publication number
JPS5426674A
JPS5426674A JP9192977A JP9192977A JPS5426674A JP S5426674 A JPS5426674 A JP S5426674A JP 9192977 A JP9192977 A JP 9192977A JP 9192977 A JP9192977 A JP 9192977A JP S5426674 A JPS5426674 A JP S5426674A
Authority
JP
Japan
Prior art keywords
semiconductor device
electrode material
glass
powder
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9192977A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159546B2 (enrdf_load_stackoverflow
Inventor
Manabu Yoshida
Jun Fukuchi
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9192977A priority Critical patent/JPS5426674A/ja
Priority to AU38236/78A priority patent/AU509758B2/en
Priority to DE2833214A priority patent/DE2833214C2/de
Publication of JPS5426674A publication Critical patent/JPS5426674A/ja
Publication of JPS6159546B2 publication Critical patent/JPS6159546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
JP9192977A 1977-07-29 1977-07-29 Electrode material for semiconductor device Granted JPS5426674A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9192977A JPS5426674A (en) 1977-07-29 1977-07-29 Electrode material for semiconductor device
AU38236/78A AU509758B2 (en) 1977-07-29 1978-07-21 Ohmic electrode to semiconductor device
DE2833214A DE2833214C2 (de) 1977-07-29 1978-07-28 Verfahren zum Herstellen einer für eine Solarzelle bestimmten Elektrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9192977A JPS5426674A (en) 1977-07-29 1977-07-29 Electrode material for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5426674A true JPS5426674A (en) 1979-02-28
JPS6159546B2 JPS6159546B2 (enrdf_load_stackoverflow) 1986-12-17

Family

ID=14040266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9192977A Granted JPS5426674A (en) 1977-07-29 1977-07-29 Electrode material for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5426674A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179404A (en) * 1981-04-30 1982-11-05 Masabumi Isobe Cylinder device
JPS59181071A (ja) * 1983-03-30 1984-10-15 Hoxan Corp 太陽電池の表面電極形成方法
WO2008078374A1 (ja) * 2006-12-25 2008-07-03 Namics Corporation 太陽電池用導電性ペースト

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141520A (ja) * 2000-10-31 2002-05-17 Kyocera Corp 太陽電池素子およびその製造方法
JP6741626B2 (ja) 2017-06-26 2020-08-19 信越化学工業株式会社 高効率裏面電極型太陽電池及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179404A (en) * 1981-04-30 1982-11-05 Masabumi Isobe Cylinder device
JPS59181071A (ja) * 1983-03-30 1984-10-15 Hoxan Corp 太陽電池の表面電極形成方法
WO2008078374A1 (ja) * 2006-12-25 2008-07-03 Namics Corporation 太陽電池用導電性ペースト
JPWO2008078374A1 (ja) * 2006-12-25 2010-04-15 ナミックス株式会社 太陽電池用導電性ペースト

Also Published As

Publication number Publication date
JPS6159546B2 (enrdf_load_stackoverflow) 1986-12-17

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