JPS5426674A - Electrode material for semiconductor device - Google Patents
Electrode material for semiconductor deviceInfo
- Publication number
- JPS5426674A JPS5426674A JP9192977A JP9192977A JPS5426674A JP S5426674 A JPS5426674 A JP S5426674A JP 9192977 A JP9192977 A JP 9192977A JP 9192977 A JP9192977 A JP 9192977A JP S5426674 A JPS5426674 A JP S5426674A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- electrode material
- glass
- powder
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007772 electrode material Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 239000011521 glass Substances 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9192977A JPS5426674A (en) | 1977-07-29 | 1977-07-29 | Electrode material for semiconductor device |
AU38236/78A AU509758B2 (en) | 1977-07-29 | 1978-07-21 | Ohmic electrode to semiconductor device |
DE19782833214 DE2833214C2 (de) | 1977-07-29 | 1978-07-28 | Verfahren zum Herstellen einer für eine Solarzelle bestimmten Elektrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9192977A JPS5426674A (en) | 1977-07-29 | 1977-07-29 | Electrode material for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5426674A true JPS5426674A (en) | 1979-02-28 |
JPS6159546B2 JPS6159546B2 (de) | 1986-12-17 |
Family
ID=14040266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9192977A Granted JPS5426674A (en) | 1977-07-29 | 1977-07-29 | Electrode material for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5426674A (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57179404A (en) * | 1981-04-30 | 1982-11-05 | Masabumi Isobe | Cylinder device |
JPS59181071A (ja) * | 1983-03-30 | 1984-10-15 | Hoxan Corp | 太陽電池の表面電極形成方法 |
WO2008078374A1 (ja) * | 2006-12-25 | 2008-07-03 | Namics Corporation | 太陽電池用導電性ペースト |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002141520A (ja) * | 2000-10-31 | 2002-05-17 | Kyocera Corp | 太陽電池素子およびその製造方法 |
JP6741626B2 (ja) | 2017-06-26 | 2020-08-19 | 信越化学工業株式会社 | 高効率裏面電極型太陽電池及びその製造方法 |
-
1977
- 1977-07-29 JP JP9192977A patent/JPS5426674A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57179404A (en) * | 1981-04-30 | 1982-11-05 | Masabumi Isobe | Cylinder device |
JPS59181071A (ja) * | 1983-03-30 | 1984-10-15 | Hoxan Corp | 太陽電池の表面電極形成方法 |
JPH0467347B2 (de) * | 1983-03-30 | 1992-10-28 | Hokusan Kk | |
WO2008078374A1 (ja) * | 2006-12-25 | 2008-07-03 | Namics Corporation | 太陽電池用導電性ペースト |
JPWO2008078374A1 (ja) * | 2006-12-25 | 2010-04-15 | ナミックス株式会社 | 太陽電池用導電性ペースト |
Also Published As
Publication number | Publication date |
---|---|
JPS6159546B2 (de) | 1986-12-17 |
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