JPS5424817B2 - - Google Patents
Info
- Publication number
- JPS5424817B2 JPS5424817B2 JP13056074A JP13056074A JPS5424817B2 JP S5424817 B2 JPS5424817 B2 JP S5424817B2 JP 13056074 A JP13056074 A JP 13056074A JP 13056074 A JP13056074 A JP 13056074A JP S5424817 B2 JPS5424817 B2 JP S5424817B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7340669A FR2251370B1 (ja) | 1973-11-15 | 1973-11-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5081677A JPS5081677A (ja) | 1975-07-02 |
JPS5424817B2 true JPS5424817B2 (ja) | 1979-08-23 |
Family
ID=9127789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13056074A Expired JPS5424817B2 (ja) | 1973-11-15 | 1974-11-14 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5424817B2 (ja) |
DE (1) | DE2453509C2 (ja) |
FR (1) | FR2251370B1 (ja) |
GB (1) | GB1491255A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0133372Y2 (ja) * | 1982-03-01 | 1989-10-11 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52112772U (ja) * | 1976-02-20 | 1977-08-26 | ||
JPS5480071A (en) * | 1977-12-09 | 1979-06-26 | Hitachi Ltd | Vapor growth method for semiconductor layer |
JPS54150971A (en) * | 1978-05-19 | 1979-11-27 | Toshiba Corp | Liquid-phase epitaxial growth method for semiconductor element |
FR2463819A1 (fr) * | 1979-08-21 | 1981-02-27 | Thomson Csf | Reacteur de depot chimique en phase vapeur fonctionnant sous basse pression |
JPS5670830A (en) * | 1979-11-10 | 1981-06-13 | Toshiba Corp | Vapor growth method |
US4309240A (en) * | 1980-05-16 | 1982-01-05 | Advanced Crystal Sciences, Inc. | Process for chemical vapor deposition of films on silicon wafers |
JPS6216516A (ja) * | 1985-07-15 | 1987-01-24 | Mitsubishi Electric Corp | 半導体製造装置 |
JPH06818Y2 (ja) * | 1989-09-21 | 1994-01-05 | 日本エー・エス・エム株式会社 | Cvd装置のための基板支持装置 |
US5192371A (en) * | 1991-05-21 | 1993-03-09 | Asm Japan K.K. | Substrate supporting apparatus for a CVD apparatus |
JP2015145317A (ja) * | 2014-01-31 | 2015-08-13 | ヤマハ株式会社 | カーボンナノチューブの製造装置 |
JP2015160747A (ja) * | 2014-02-25 | 2015-09-07 | ヤマハ株式会社 | カーボンナノチューブの製造装置 |
JP6521122B2 (ja) * | 2018-02-22 | 2019-05-29 | 日本電気硝子株式会社 | デバイスの製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944517U (ja) * | 1972-07-21 | 1974-04-19 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3553037A (en) * | 1968-04-05 | 1971-01-05 | Stewart Warner Corp | Gas diffusion method for fabricating semiconductor devices |
-
1973
- 1973-11-15 FR FR7340669A patent/FR2251370B1/fr not_active Expired
-
1974
- 1974-11-12 DE DE19742453509 patent/DE2453509C2/de not_active Expired
- 1974-11-12 GB GB4896774A patent/GB1491255A/en not_active Expired
- 1974-11-14 JP JP13056074A patent/JPS5424817B2/ja not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944517U (ja) * | 1972-07-21 | 1974-04-19 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0133372Y2 (ja) * | 1982-03-01 | 1989-10-11 |
Also Published As
Publication number | Publication date |
---|---|
FR2251370B1 (ja) | 1978-12-01 |
GB1491255A (en) | 1977-11-09 |
DE2453509A1 (de) | 1975-05-22 |
JPS5081677A (ja) | 1975-07-02 |
DE2453509C2 (de) | 1983-02-17 |
FR2251370A1 (ja) | 1975-06-13 |