FR2251370A1 - - Google Patents

Info

Publication number
FR2251370A1
FR2251370A1 FR7340669A FR7340669A FR2251370A1 FR 2251370 A1 FR2251370 A1 FR 2251370A1 FR 7340669 A FR7340669 A FR 7340669A FR 7340669 A FR7340669 A FR 7340669A FR 2251370 A1 FR2251370 A1 FR 2251370A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7340669A
Other languages
French (fr)
Other versions
FR2251370B1 (ja
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7340669A priority Critical patent/FR2251370B1/fr
Priority to DE19742453509 priority patent/DE2453509C2/de
Priority to GB4896774A priority patent/GB1491255A/en
Priority to JP13056074A priority patent/JPS5424817B2/ja
Publication of FR2251370A1 publication Critical patent/FR2251370A1/fr
Priority to US05/653,498 priority patent/US4018183A/en
Application granted granted Critical
Publication of FR2251370B1 publication Critical patent/FR2251370B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
FR7340669A 1973-11-15 1973-11-15 Expired FR2251370B1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7340669A FR2251370B1 (ja) 1973-11-15 1973-11-15
DE19742453509 DE2453509C2 (de) 1973-11-15 1974-11-12 Vorrichtung zur Behandlung von Scheiben in einem reaktiven Gasstrom, insbesondere zur Behandlung von Halbleiterscheiben
GB4896774A GB1491255A (en) 1973-11-15 1974-11-12 Treating slices of material with a gas
JP13056074A JPS5424817B2 (ja) 1973-11-15 1974-11-14
US05/653,498 US4018183A (en) 1973-11-15 1976-01-29 Apparatus for treating a plurality of semiconductor slices to a reacting gas current

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7340669A FR2251370B1 (ja) 1973-11-15 1973-11-15

Publications (2)

Publication Number Publication Date
FR2251370A1 true FR2251370A1 (ja) 1975-06-13
FR2251370B1 FR2251370B1 (ja) 1978-12-01

Family

ID=9127789

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7340669A Expired FR2251370B1 (ja) 1973-11-15 1973-11-15

Country Status (4)

Country Link
JP (1) JPS5424817B2 (ja)
DE (1) DE2453509C2 (ja)
FR (1) FR2251370B1 (ja)
GB (1) GB1491255A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2463819A1 (fr) * 1979-08-21 1981-02-27 Thomson Csf Reacteur de depot chimique en phase vapeur fonctionnant sous basse pression
EP0029146A1 (en) * 1979-11-10 1981-05-27 Kabushiki Kaisha Toshiba Vapor growth method

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52112772U (ja) * 1976-02-20 1977-08-26
JPS5480071A (en) * 1977-12-09 1979-06-26 Hitachi Ltd Vapor growth method for semiconductor layer
JPS54150971A (en) * 1978-05-19 1979-11-27 Toshiba Corp Liquid-phase epitaxial growth method for semiconductor element
US4309240A (en) * 1980-05-16 1982-01-05 Advanced Crystal Sciences, Inc. Process for chemical vapor deposition of films on silicon wafers
JPS58132731U (ja) * 1982-03-01 1983-09-07 セイレイ工業株式会社 自走自脱におけるエンジンからの伝動装置
JPS6216516A (ja) * 1985-07-15 1987-01-24 Mitsubishi Electric Corp 半導体製造装置
JPH06818Y2 (ja) * 1989-09-21 1994-01-05 日本エー・エス・エム株式会社 Ｃｖｄ装置のための基板支持装置
US5192371A (en) * 1991-05-21 1993-03-09 Asm Japan K.K. Substrate supporting apparatus for a CVD apparatus
JP2015145317A (ja) * 2014-01-31 2015-08-13 ヤマハ株式会社 カーボンナノチューブの製造装置
JP2015160747A (ja) * 2014-02-25 2015-09-07 ヤマハ株式会社 カーボンナノチューブの製造装置
JP6521122B2 (ja) * 2018-02-22 2019-05-29 日本電気硝子株式会社 デバイスの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3553037A (en) * 1968-04-05 1971-01-05 Stewart Warner Corp Gas diffusion method for fabricating semiconductor devices
JPS4944517U (ja) * 1972-07-21 1974-04-19

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2463819A1 (fr) * 1979-08-21 1981-02-27 Thomson Csf Reacteur de depot chimique en phase vapeur fonctionnant sous basse pression
EP0029146A1 (en) * 1979-11-10 1981-05-27 Kabushiki Kaisha Toshiba Vapor growth method
US4352713A (en) * 1979-11-10 1982-10-05 Tokyo Shibaura Denki Kabushiki Kaisha Vapor growth method

Also Published As

Publication number Publication date
DE2453509A1 (de) 1975-05-22
FR2251370B1 (ja) 1978-12-01
DE2453509C2 (de) 1983-02-17
JPS5424817B2 (ja) 1979-08-23
GB1491255A (en) 1977-11-09
JPS5081677A (ja) 1975-07-02

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Legal Events

Date Code Title Description
ST Notification of lapse