JPS5419677A - Method of producing semiconductor - Google Patents

Method of producing semiconductor

Info

Publication number
JPS5419677A
JPS5419677A JP7662378A JP7662378A JPS5419677A JP S5419677 A JPS5419677 A JP S5419677A JP 7662378 A JP7662378 A JP 7662378A JP 7662378 A JP7662378 A JP 7662378A JP S5419677 A JPS5419677 A JP S5419677A
Authority
JP
Japan
Prior art keywords
producing semiconductor
semiconductor
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7662378A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6138623B2 (enExample
Inventor
Fuen Baiikuo
Chienguukuo Fuen Jiyooji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5419677A publication Critical patent/JPS5419677A/ja
Publication of JPS6138623B2 publication Critical patent/JPS6138623B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/69433—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P14/662—
    • H10P14/69215—
    • H10P14/6927—
    • H10P76/40—
    • H10P14/6329—
    • H10P14/6334—

Landscapes

  • Engineering & Computer Science (AREA)
  • Bipolar Transistors (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
JP7662378A 1977-07-12 1978-06-26 Method of producing semiconductor Granted JPS5419677A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/814,829 US4131497A (en) 1977-07-12 1977-07-12 Method of manufacturing self-aligned semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5419677A true JPS5419677A (en) 1979-02-14
JPS6138623B2 JPS6138623B2 (enExample) 1986-08-30

Family

ID=25216103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7662378A Granted JPS5419677A (en) 1977-07-12 1978-06-26 Method of producing semiconductor

Country Status (4)

Country Link
US (1) US4131497A (enExample)
EP (1) EP0000326B1 (enExample)
JP (1) JPS5419677A (enExample)
DE (1) DE2860161D1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4210689A (en) * 1977-12-26 1980-07-01 Tokyo Shibaura Denki Kabushiki Kaisha Method of producing semiconductor devices
US4263057A (en) * 1978-04-19 1981-04-21 Rca Corporation Method of manufacturing short channel MOS devices
US4199380A (en) * 1978-11-13 1980-04-22 Motorola, Inc. Integrated circuit method
FR2454698A1 (fr) * 1979-04-20 1980-11-14 Radiotechnique Compelec Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede
US4243435A (en) * 1979-06-22 1981-01-06 International Business Machines Corporation Bipolar transistor fabrication process with an ion implanted emitter
US4272882A (en) * 1980-05-08 1981-06-16 Rca Corporation Method of laying out an integrated circuit with specific alignment of the collector contact with the emitter region
EP0054303B1 (en) * 1980-12-17 1986-06-11 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
US4436593A (en) 1981-07-13 1984-03-13 Memorex Corporation Self-aligned pole tips
JPH0249280U (enExample) * 1988-09-30 1990-04-05
US5079177A (en) * 1989-09-19 1992-01-07 National Semiconductor Corporation Process for fabricating high performance bicmos circuits
JP2509717B2 (ja) * 1989-12-06 1996-06-26 株式会社東芝 半導体装置の製造方法
US5702959A (en) * 1995-05-31 1997-12-30 Texas Instruments Incorporated Method for making an isolated vertical transistor
KR102013416B1 (ko) * 2012-10-26 2019-08-22 어플라이드 머티어리얼스, 인코포레이티드 조합 마스킹

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50104872A (enExample) * 1974-01-17 1975-08-19
JPS5223263A (en) * 1975-08-18 1977-02-22 Nec Corp Method of manufacturing semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967981A (en) * 1971-01-14 1976-07-06 Shumpei Yamazaki Method for manufacturing a semiconductor field effort transistor
NL173110C (nl) * 1971-03-17 1983-12-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht.
US4028150A (en) * 1973-05-03 1977-06-07 Ibm Corporation Method for making reliable MOSFET device
US3900352A (en) * 1973-11-01 1975-08-19 Ibm Isolated fixed and variable threshold field effect transistor fabrication technique
US3928082A (en) * 1973-12-28 1975-12-23 Texas Instruments Inc Self-aligned transistor process
US3948694A (en) * 1975-04-30 1976-04-06 Motorola, Inc. Self-aligned method for integrated circuit manufacture
US3961999A (en) * 1975-06-30 1976-06-08 Ibm Corporation Method for forming recessed dielectric isolation with a minimized "bird's beak" problem
US4053349A (en) * 1976-02-02 1977-10-11 Intel Corporation Method for forming a narrow gap
US4060427A (en) * 1976-04-05 1977-11-29 Ibm Corporation Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps
US4052229A (en) * 1976-06-25 1977-10-04 Intel Corporation Process for preparing a substrate for mos devices of different thresholds
US4040891A (en) * 1976-06-30 1977-08-09 Ibm Corporation Etching process utilizing the same positive photoresist layer for two etching steps
US4061530A (en) * 1976-07-19 1977-12-06 Fairchild Camera And Instrument Corporation Process for producing successive stages of a charge coupled device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50104872A (enExample) * 1974-01-17 1975-08-19
JPS5223263A (en) * 1975-08-18 1977-02-22 Nec Corp Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
EP0000326B1 (de) 1980-09-17
DE2860161D1 (en) 1980-12-18
EP0000326A1 (de) 1979-01-24
US4131497A (en) 1978-12-26
JPS6138623B2 (enExample) 1986-08-30

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