JPS54161276A - Etching processor by gas containing hydrogen fluoride - Google Patents

Etching processor by gas containing hydrogen fluoride

Info

Publication number
JPS54161276A
JPS54161276A JP6991178A JP6991178A JPS54161276A JP S54161276 A JPS54161276 A JP S54161276A JP 6991178 A JP6991178 A JP 6991178A JP 6991178 A JP6991178 A JP 6991178A JP S54161276 A JPS54161276 A JP S54161276A
Authority
JP
Japan
Prior art keywords
fluoride
exhaust gas
pump
fluoric acid
gas containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6991178A
Other languages
Japanese (ja)
Inventor
Takuji Sugawara
Masahiro Shibagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6991178A priority Critical patent/JPS54161276A/en
Publication of JPS54161276A publication Critical patent/JPS54161276A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain a pollution-free processor by converting a fluoride such as HF in exhaust gas into fluoric acid and a hydroxide.
CONSTITUTION: Etching container 10 is evacuated by pump 24. At the prior stage of pump 24, a cooler and filter are provided so as to suppress the deterioration of the pump due to a fluoride such as HF in exhaust gas. At the post stage of the pump, container 26 with partition board 50 arranged inside is provided, water is supplied from shower 27 at the upper wall, and the fluoride in the exhaust gas is converted into fluoric acid and a hydroxide and removed. As a result, the gas after passing under shower 27 changes into non-pollution exhaust gas, which can be discharged into the air. The fluoride having reacted on water becomes dilute fluoric acid or silicofluoric acid, which is treated in an ordinary neutralization tank, causing no problem.
COPYRIGHT: (C)1979,JPO&Japio
JP6991178A 1978-06-12 1978-06-12 Etching processor by gas containing hydrogen fluoride Pending JPS54161276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6991178A JPS54161276A (en) 1978-06-12 1978-06-12 Etching processor by gas containing hydrogen fluoride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6991178A JPS54161276A (en) 1978-06-12 1978-06-12 Etching processor by gas containing hydrogen fluoride

Publications (1)

Publication Number Publication Date
JPS54161276A true JPS54161276A (en) 1979-12-20

Family

ID=13416343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6991178A Pending JPS54161276A (en) 1978-06-12 1978-06-12 Etching processor by gas containing hydrogen fluoride

Country Status (1)

Country Link
JP (1) JPS54161276A (en)

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