JPS5415754B2 - - Google Patents
Info
- Publication number
- JPS5415754B2 JPS5415754B2 JP11319576A JP11319576A JPS5415754B2 JP S5415754 B2 JPS5415754 B2 JP S5415754B2 JP 11319576 A JP11319576 A JP 11319576A JP 11319576 A JP11319576 A JP 11319576A JP S5415754 B2 JPS5415754 B2 JP S5415754B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H10P30/204—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
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- H10P30/212—
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- H10W15/00—
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- H10W15/01—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/039—Displace P-N junction
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/097—Lattice strain and defects
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/938—Lattice strain control or utilization
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/615,481 US3976512A (en) | 1975-09-22 | 1975-09-22 | Method for reducing the defect density of an integrated circuit utilizing ion implantation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5239386A JPS5239386A (en) | 1977-03-26 |
| JPS5415754B2 true JPS5415754B2 (show.php) | 1979-06-16 |
Family
ID=24465561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51113195A Granted JPS5239386A (en) | 1975-09-22 | 1976-09-22 | Method of producing ic |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3976512A (show.php) |
| JP (1) | JPS5239386A (show.php) |
| CA (1) | CA1046168A (show.php) |
| DE (1) | DE2641024A1 (show.php) |
| FR (1) | FR2325190A1 (show.php) |
| GB (1) | GB1551129A (show.php) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4262056A (en) * | 1978-09-15 | 1981-04-14 | The United States Of America As Represented By The Secretary Of The Navy | Ion-implanted multilayer optical interference filter |
| JPS5617011A (en) * | 1979-07-23 | 1981-02-18 | Toshiba Corp | Semiconductor device and manufacture thereof |
| NL188432C (nl) * | 1980-12-26 | 1992-06-16 | Nippon Telegraph & Telephone | Werkwijze voor het vervaardigen van een mosfet. |
| US4416708A (en) * | 1982-01-15 | 1983-11-22 | International Rectifier Corporation | Method of manufacture of high speed, high power bipolar transistor |
| US4571275A (en) * | 1983-12-19 | 1986-02-18 | International Business Machines Corporation | Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector |
| JPS60130844A (ja) * | 1983-12-20 | 1985-07-12 | Toshiba Corp | 半導体装置の製造方法 |
| US4548658A (en) * | 1985-01-30 | 1985-10-22 | Cook Melvin S | Growth of lattice-graded epilayers |
| US4644383A (en) * | 1985-04-08 | 1987-02-17 | Harris Corporation | Subcollector for oxide and junction isolated IC's |
| US4695868A (en) * | 1985-12-13 | 1987-09-22 | Rca Corporation | Patterned metallization for integrated circuits |
| US5156995A (en) * | 1988-04-01 | 1992-10-20 | Cornell Research Foundation, Inc. | Method for reducing or eliminating interface defects in mismatched semiconductor epilayers |
| US5250445A (en) * | 1988-12-20 | 1993-10-05 | Texas Instruments Incorporated | Discretionary gettering of semiconductor circuits |
| US5207863A (en) * | 1990-04-06 | 1993-05-04 | Canon Kabushiki Kaisha | Crystal growth method and crystalline article obtained by said method |
| EP0584436A1 (en) * | 1992-08-26 | 1994-03-02 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Process for forming buried regions, having different doping concentration, in monolitic semiconductor devices |
| US6316336B1 (en) * | 1999-03-01 | 2001-11-13 | Richard A. Blanchard | Method for forming buried layers with top-side contacts and the resulting structure |
| DE102004051081A1 (de) * | 2004-10-19 | 2006-04-27 | Austriamicrosystems Ag | JFET und Herstellungsverfahren |
| TW201029073A (en) * | 2009-01-21 | 2010-08-01 | Univ Nat Chunghsing | Epitaxial wafer with low surface defect density |
| JP2019062139A (ja) * | 2017-09-28 | 2019-04-18 | 豊田合成株式会社 | 半導体装置の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL297820A (show.php) * | 1962-10-05 | |||
| US3283223A (en) * | 1963-12-27 | 1966-11-01 | Ibm | Transistor and method of fabrication to minimize surface recombination effects |
| FR1495766A (show.php) * | 1965-12-10 | 1967-12-20 | ||
| US3510736A (en) * | 1967-11-17 | 1970-05-05 | Rca Corp | Integrated circuit planar transistor |
| NL6911771A (show.php) * | 1968-08-14 | 1970-02-17 | ||
| US3600241A (en) * | 1968-09-09 | 1971-08-17 | Ibm | Method of fabricating semiconductor devices by diffusion |
| US3717790A (en) * | 1971-06-24 | 1973-02-20 | Bell Telephone Labor Inc | Ion implanted silicon diode array targets for electron beam camera tubes |
| US3902926A (en) * | 1974-02-21 | 1975-09-02 | Signetics Corp | Method of making an ion implanted resistor |
| NL163898C (nl) * | 1974-03-16 | 1980-10-15 | Nippon Musical Instruments Mfg | Werkwijze voor het vervaardigen van een veldeffect- transistor met onverzadigde stroom-spanningskarakteri- stieken. |
| US3916431A (en) * | 1974-06-21 | 1975-10-28 | Rca Corp | Bipolar integrated circuit transistor with lightly doped subcollector core |
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1975
- 1975-09-22 US US05/615,481 patent/US3976512A/en not_active Expired - Lifetime
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1976
- 1976-09-11 DE DE19762641024 patent/DE2641024A1/de not_active Withdrawn
- 1976-09-17 CA CA261,439A patent/CA1046168A/en not_active Expired
- 1976-09-17 GB GB38560/76A patent/GB1551129A/en not_active Expired
- 1976-09-20 FR FR7628165A patent/FR2325190A1/fr not_active Withdrawn
- 1976-09-22 JP JP51113195A patent/JPS5239386A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2325190A1 (fr) | 1977-04-15 |
| DE2641024A1 (de) | 1977-03-31 |
| GB1551129A (en) | 1979-08-22 |
| US3976512A (en) | 1976-08-24 |
| JPS5239386A (en) | 1977-03-26 |
| CA1046168A (en) | 1979-01-09 |