JPS54152634A - Vacuum deposition method - Google Patents

Vacuum deposition method

Info

Publication number
JPS54152634A
JPS54152634A JP6133178A JP6133178A JPS54152634A JP S54152634 A JPS54152634 A JP S54152634A JP 6133178 A JP6133178 A JP 6133178A JP 6133178 A JP6133178 A JP 6133178A JP S54152634 A JPS54152634 A JP S54152634A
Authority
JP
Japan
Prior art keywords
deposition
substrate
vacuum
irradiating
substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6133178A
Other languages
Japanese (ja)
Inventor
Tadaharu Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP6133178A priority Critical patent/JPS54152634A/en
Publication of JPS54152634A publication Critical patent/JPS54152634A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a high density diposited film with good adherence on a substrate made of substance of low heat resistance by carrying out deposition in a vacuum while irradiating the substrate with electromagnetic waves having specified energy. CONSTITUTION:In deposition of silicon oxide or the like on a substrate made of substance of low heat resistance, e.g. plastics, deposition is carried out in a vacuum while irradiating the substrate with electromagnetic waves having energy of 1-1X16<10> eV. By this method the adherence and density of a deposited film of silicon oxide or the like are raised. This method is applicable to a wide material range including a lens, glass and a plastic sheet.
JP6133178A 1978-05-23 1978-05-23 Vacuum deposition method Pending JPS54152634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6133178A JPS54152634A (en) 1978-05-23 1978-05-23 Vacuum deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6133178A JPS54152634A (en) 1978-05-23 1978-05-23 Vacuum deposition method

Publications (1)

Publication Number Publication Date
JPS54152634A true JPS54152634A (en) 1979-12-01

Family

ID=13168040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6133178A Pending JPS54152634A (en) 1978-05-23 1978-05-23 Vacuum deposition method

Country Status (1)

Country Link
JP (1) JPS54152634A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0190051A2 (en) * 1985-01-30 1986-08-06 Kabushiki Kaisha Toshiba Method and apparatus for forming films

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0190051A2 (en) * 1985-01-30 1986-08-06 Kabushiki Kaisha Toshiba Method and apparatus for forming films

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