JPS54150947A - Diode phase shifter - Google Patents

Diode phase shifter

Info

Publication number
JPS54150947A
JPS54150947A JP5874178A JP5874178A JPS54150947A JP S54150947 A JPS54150947 A JP S54150947A JP 5874178 A JP5874178 A JP 5874178A JP 5874178 A JP5874178 A JP 5874178A JP S54150947 A JPS54150947 A JP S54150947A
Authority
JP
Japan
Prior art keywords
diode
terminal
reactance
phase shifter
giving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5874178A
Other languages
Japanese (ja)
Inventor
Naotaka Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5874178A priority Critical patent/JPS54150947A/en
Publication of JPS54150947A publication Critical patent/JPS54150947A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/18—Networks for phase shifting

Landscapes

  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)

Abstract

PURPOSE:To decrease the number of the diode by forming the bridge circuit with the semiconductor diode and plural units of the reactance element and thus changing the passing phase shift between the input and output terminals. CONSTITUTION:Transmission line 6a and 6b of characteristic impedance Z0 are connected between input terminal 4a and terminal 7 plus output terminal 5a and terminal 9 respectively. The phase shifter consists of the bridge circuit comprising reactance X1, X2 and X3 plus diode D1 and D2, and reactance X4. Thus, the passing phase can be switched by giving the forward bias to diode D1 and D2 or giving the backward bias or OV. As a result, only two units of using diode suffices to realize a miniature size.
JP5874178A 1978-05-19 1978-05-19 Diode phase shifter Pending JPS54150947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5874178A JPS54150947A (en) 1978-05-19 1978-05-19 Diode phase shifter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5874178A JPS54150947A (en) 1978-05-19 1978-05-19 Diode phase shifter

Publications (1)

Publication Number Publication Date
JPS54150947A true JPS54150947A (en) 1979-11-27

Family

ID=13092940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5874178A Pending JPS54150947A (en) 1978-05-19 1978-05-19 Diode phase shifter

Country Status (1)

Country Link
JP (1) JPS54150947A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000151204A (en) * 1998-11-09 2000-05-30 Alcatel High frequency circuit having variable phase shifter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000151204A (en) * 1998-11-09 2000-05-30 Alcatel High frequency circuit having variable phase shifter

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