JPS54143267A - Electronic watch - Google Patents

Electronic watch

Info

Publication number
JPS54143267A
JPS54143267A JP5101978A JP5101978A JPS54143267A JP S54143267 A JPS54143267 A JP S54143267A JP 5101978 A JP5101978 A JP 5101978A JP 5101978 A JP5101978 A JP 5101978A JP S54143267 A JPS54143267 A JP S54143267A
Authority
JP
Japan
Prior art keywords
mnosfets
volatile
voltages
different threshold
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5101978A
Other languages
Japanese (ja)
Other versions
JPS6129471B2 (en
Inventor
Kazunari Hayafuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP5101978A priority Critical patent/JPS54143267A/en
Publication of JPS54143267A publication Critical patent/JPS54143267A/en
Publication of JPS6129471B2 publication Critical patent/JPS6129471B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G04—HOROLOGY
    • G04C—ELECTROMECHANICAL CLOCKS OR WATCHES
    • G04C10/00—Arrangements of electric power supplies in time pieces
    • G04C10/04—Arrangements of electric power supplies in time pieces with means for indicating the condition of the power supply

Abstract

PURPOSE:To enable the potential fluctuations of battery, etc. in an electronic watch to be strictly detected by applying different applied voltages or applied time to the gate electrode terminals to non-volatile MNOSFETs and obtaining different threshold value voltages. CONSTITUTION:In non-volatile MNOSFETs, the non-volatile MNOSFETs of different threshold values may be readily produced without increasing an intricate mask alignment process and thermal hysteresis by applying different applied voltages or applied times to their gate electrode terminals. If the FETs 12, 13, 14 of different threshold voltages obtained in this way are provided in a watch, not only the fluctuations of the detecting voltage V15 may be strictly detected, but also the process of production may be made extremely simple.
JP5101978A 1978-04-28 1978-04-28 Electronic watch Granted JPS54143267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5101978A JPS54143267A (en) 1978-04-28 1978-04-28 Electronic watch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5101978A JPS54143267A (en) 1978-04-28 1978-04-28 Electronic watch

Publications (2)

Publication Number Publication Date
JPS54143267A true JPS54143267A (en) 1979-11-08
JPS6129471B2 JPS6129471B2 (en) 1986-07-07

Family

ID=12875072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5101978A Granted JPS54143267A (en) 1978-04-28 1978-04-28 Electronic watch

Country Status (1)

Country Link
JP (1) JPS54143267A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100423916B1 (en) * 1994-07-15 2004-07-19 소니 가부시끼 가이샤 Miselement and analog misfet using the same, threshold voltage correcting method, channel potential adjusting method, bias circuit, charge transfer device, solid-state imaging device, and charge detecting device
JP2010050493A (en) * 2009-12-02 2010-03-04 Sony Corp Solid-state image sensor
JP2014102112A (en) * 2012-11-19 2014-06-05 Citizen Holdings Co Ltd Electronic circuit and electronic apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100423916B1 (en) * 1994-07-15 2004-07-19 소니 가부시끼 가이샤 Miselement and analog misfet using the same, threshold voltage correcting method, channel potential adjusting method, bias circuit, charge transfer device, solid-state imaging device, and charge detecting device
JP2010050493A (en) * 2009-12-02 2010-03-04 Sony Corp Solid-state image sensor
JP2014102112A (en) * 2012-11-19 2014-06-05 Citizen Holdings Co Ltd Electronic circuit and electronic apparatus

Also Published As

Publication number Publication date
JPS6129471B2 (en) 1986-07-07

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