JPS54132797A - Polycrystal silicon resistor - Google Patents
Polycrystal silicon resistorInfo
- Publication number
- JPS54132797A JPS54132797A JP4021478A JP4021478A JPS54132797A JP S54132797 A JPS54132797 A JP S54132797A JP 4021478 A JP4021478 A JP 4021478A JP 4021478 A JP4021478 A JP 4021478A JP S54132797 A JPS54132797 A JP S54132797A
- Authority
- JP
- Japan
- Prior art keywords
- region
- conduction
- resistance
- current density
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To enable fine correction of resistance due to conduction with current density exceeding over the threshold level, by forming a region where the current density during the conduction is higher than that at other region on a portion of resistor.
CONSTITUTION: A region 1 where the current density during the conduction becomes higher than that at other region is formed on a portion of polycrystal silicon resistors 1W3. For example metallic electrodes 4, 5 are provided at both ends and the width of resistor in a region 1 at the center or end of polysilicon resistor stripes 1W3 is made narrower than that in other regions 2, 3. The resistance in said region 1 is preferable to be lower than 20% of entire resistance. The resistance of polysilicon resistor decreases gradually and continuously when it is conducted with current having current density exceeding over the threshold level, and maintains approximately same resistance even after releasing of conduction. With such arrangement fine correction of resistance due to the conduction can be performed easily.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4021478A JPS54132797A (en) | 1978-04-07 | 1978-04-07 | Polycrystal silicon resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4021478A JPS54132797A (en) | 1978-04-07 | 1978-04-07 | Polycrystal silicon resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54132797A true JPS54132797A (en) | 1979-10-16 |
JPS5751961B2 JPS5751961B2 (en) | 1982-11-05 |
Family
ID=12574517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4021478A Granted JPS54132797A (en) | 1978-04-07 | 1978-04-07 | Polycrystal silicon resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54132797A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7427802B2 (en) * | 2002-02-11 | 2008-09-23 | Stmicroelectronics S.A. | Irreversible reduction of the value of a polycrystalline silicon resistor |
JP2020021965A (en) * | 2019-11-07 | 2020-02-06 | サンコール株式会社 | Shunt resistor |
-
1978
- 1978-04-07 JP JP4021478A patent/JPS54132797A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7427802B2 (en) * | 2002-02-11 | 2008-09-23 | Stmicroelectronics S.A. | Irreversible reduction of the value of a polycrystalline silicon resistor |
JP2020021965A (en) * | 2019-11-07 | 2020-02-06 | サンコール株式会社 | Shunt resistor |
Also Published As
Publication number | Publication date |
---|---|
JPS5751961B2 (en) | 1982-11-05 |
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