JPS54132797A - Polycrystal silicon resistor - Google Patents

Polycrystal silicon resistor

Info

Publication number
JPS54132797A
JPS54132797A JP4021478A JP4021478A JPS54132797A JP S54132797 A JPS54132797 A JP S54132797A JP 4021478 A JP4021478 A JP 4021478A JP 4021478 A JP4021478 A JP 4021478A JP S54132797 A JPS54132797 A JP S54132797A
Authority
JP
Japan
Prior art keywords
region
conduction
resistance
current density
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4021478A
Other languages
Japanese (ja)
Other versions
JPS5751961B2 (en
Inventor
Yoshihito Amamiya
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4021478A priority Critical patent/JPS54132797A/en
Publication of JPS54132797A publication Critical patent/JPS54132797A/en
Publication of JPS5751961B2 publication Critical patent/JPS5751961B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To enable fine correction of resistance due to conduction with current density exceeding over the threshold level, by forming a region where the current density during the conduction is higher than that at other region on a portion of resistor.
CONSTITUTION: A region 1 where the current density during the conduction becomes higher than that at other region is formed on a portion of polycrystal silicon resistors 1W3. For example metallic electrodes 4, 5 are provided at both ends and the width of resistor in a region 1 at the center or end of polysilicon resistor stripes 1W3 is made narrower than that in other regions 2, 3. The resistance in said region 1 is preferable to be lower than 20% of entire resistance. The resistance of polysilicon resistor decreases gradually and continuously when it is conducted with current having current density exceeding over the threshold level, and maintains approximately same resistance even after releasing of conduction. With such arrangement fine correction of resistance due to the conduction can be performed easily.
COPYRIGHT: (C)1979,JPO&Japio
JP4021478A 1978-04-07 1978-04-07 Polycrystal silicon resistor Granted JPS54132797A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4021478A JPS54132797A (en) 1978-04-07 1978-04-07 Polycrystal silicon resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4021478A JPS54132797A (en) 1978-04-07 1978-04-07 Polycrystal silicon resistor

Publications (2)

Publication Number Publication Date
JPS54132797A true JPS54132797A (en) 1979-10-16
JPS5751961B2 JPS5751961B2 (en) 1982-11-05

Family

ID=12574517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4021478A Granted JPS54132797A (en) 1978-04-07 1978-04-07 Polycrystal silicon resistor

Country Status (1)

Country Link
JP (1) JPS54132797A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7427802B2 (en) * 2002-02-11 2008-09-23 Stmicroelectronics S.A. Irreversible reduction of the value of a polycrystalline silicon resistor
JP2020021965A (en) * 2019-11-07 2020-02-06 サンコール株式会社 Shunt resistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7427802B2 (en) * 2002-02-11 2008-09-23 Stmicroelectronics S.A. Irreversible reduction of the value of a polycrystalline silicon resistor
JP2020021965A (en) * 2019-11-07 2020-02-06 サンコール株式会社 Shunt resistor

Also Published As

Publication number Publication date
JPS5751961B2 (en) 1982-11-05

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