JPS54123863A - Transistor drive circuit - Google Patents
Transistor drive circuitInfo
- Publication number
- JPS54123863A JPS54123863A JP3071578A JP3071578A JPS54123863A JP S54123863 A JPS54123863 A JP S54123863A JP 3071578 A JP3071578 A JP 3071578A JP 3071578 A JP3071578 A JP 3071578A JP S54123863 A JPS54123863 A JP S54123863A
- Authority
- JP
- Japan
- Prior art keywords
- base
- time
- current
- rectifier
- transformer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/601—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors using transformer coupling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
PURPOSE:To obtain economical great current base drive circuit, by connecting the transformer and the rectifying circuit to the base and emitter circuit of the transistor Tr in opposite direction so that no current flows in the rectifying circuit during the base drive of Tr. CONSTITUTION:The output VOSC of the high frequency oscillator 1 oscillates continuous rectangular waves, and when the signal SIG controlling Tr 7 at time t0 is turned on, a signal is fed to the base of Tr 7 with Tr 3, 4, transformer 10, and rectifier 11. When the signal SIG is 0 at time t1, the signal VOFF is produced from the one shot generator 13 and flows the current of -IB in opposite direction to the base of Tr 7 via Tr 14, transformer 17, and rectifier 18. During the period at time t0 to t1, the number of rectifiers is selected so that the voltage drop of the rectifiers 18 is greater than the voltage between the base and emitter of Tr 7 to avoid the current from being flowed to the rectifier. Next, at time t2 to t3, the carrier storage of Tr 7 is discharged and -IB is decreased. Thus, the turn off time of Tr 7 is reduced, resulting in obtaining economical great current base drive circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3071578A JPS54123863A (en) | 1978-03-17 | 1978-03-17 | Transistor drive circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3071578A JPS54123863A (en) | 1978-03-17 | 1978-03-17 | Transistor drive circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54123863A true JPS54123863A (en) | 1979-09-26 |
JPS6127931B2 JPS6127931B2 (en) | 1986-06-27 |
Family
ID=12311332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3071578A Granted JPS54123863A (en) | 1978-03-17 | 1978-03-17 | Transistor drive circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54123863A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58501252A (en) * | 1981-08-06 | 1983-07-28 | グ−ルド インコ−ポレイテツド | High-speed transistor switching circuit |
JP2008160347A (en) * | 2006-12-22 | 2008-07-10 | Matsushita Electric Works Ltd | Semiconductor relay device |
-
1978
- 1978-03-17 JP JP3071578A patent/JPS54123863A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58501252A (en) * | 1981-08-06 | 1983-07-28 | グ−ルド インコ−ポレイテツド | High-speed transistor switching circuit |
JP2008160347A (en) * | 2006-12-22 | 2008-07-10 | Matsushita Electric Works Ltd | Semiconductor relay device |
Also Published As
Publication number | Publication date |
---|---|
JPS6127931B2 (en) | 1986-06-27 |
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