Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP2894678ApriorityCriticalpatent/JPS6036031B2/en
Publication of JPS54121067ApublicationCriticalpatent/JPS54121067A/en
Publication of JPS6036031B2publicationCriticalpatent/JPS6036031B2/en
Testing Or Measuring Of Semiconductors Or The Like
(AREA)
Testing Of Individual Semiconductor Devices
(AREA)
Abstract
PURPOSE: To secure an easy and accurate decision whether the broken part is the added element part of the gate insulator film for the FET which is broken between the gate and the source.
CONSTITUTION: The voltage is applied via the ammeter between drain D and sourc e S, and resistance R is connected between gate G2 and S. Thus, the change of the drain current caused by the change of R is observed. In case some defect exists in the gate insulator film, the current flows to the defective area to produce the potential difference across R. And drain current ID changes by the scale of R. In case diode D2 is broken, ID has no change according to the scale of R. Thus, the broken area can be decided in a quick and accurate way.
COPYRIGHT: (C)1979,JPO&Japio
JP2894678A1978-03-131978-03-13
How to measure semiconductor devices
ExpiredJPS6036031B2
(en)