JPS5411682A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5411682A
JPS5411682A JP7618577A JP7618577A JPS5411682A JP S5411682 A JPS5411682 A JP S5411682A JP 7618577 A JP7618577 A JP 7618577A JP 7618577 A JP7618577 A JP 7618577A JP S5411682 A JPS5411682 A JP S5411682A
Authority
JP
Japan
Prior art keywords
layer
semiconductor device
implanted
taking
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7618577A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6155775B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Mamoru Fuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7618577A priority Critical patent/JPS5411682A/ja
Publication of JPS5411682A publication Critical patent/JPS5411682A/ja
Publication of JPS6155775B2 publication Critical patent/JPS6155775B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
JP7618577A 1977-06-28 1977-06-28 Semiconductor device Granted JPS5411682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7618577A JPS5411682A (en) 1977-06-28 1977-06-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7618577A JPS5411682A (en) 1977-06-28 1977-06-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5411682A true JPS5411682A (en) 1979-01-27
JPS6155775B2 JPS6155775B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-11-29

Family

ID=13598054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7618577A Granted JPS5411682A (en) 1977-06-28 1977-06-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5411682A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159346A (ja) * 1982-03-17 1983-09-21 Mitsubishi Electric Corp 半導体集積回路装置
JPS58213447A (ja) * 1982-06-07 1983-12-12 Nec Corp 半導体装置
US5495124A (en) * 1993-01-08 1996-02-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with increased breakdown voltage
WO2000079584A1 (en) 1999-06-23 2000-12-28 Telefonaktiebolaget Lm Ericsson (Publ) Semiconductor and manufacturing method for semiconductor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0571983U (ja) * 1991-12-18 1993-09-28 松下冷機株式会社 中身商品収納表示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4945036A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-08-18 1974-04-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4945036A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-08-18 1974-04-27

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159346A (ja) * 1982-03-17 1983-09-21 Mitsubishi Electric Corp 半導体集積回路装置
JPS58213447A (ja) * 1982-06-07 1983-12-12 Nec Corp 半導体装置
US5495124A (en) * 1993-01-08 1996-02-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with increased breakdown voltage
US5624858A (en) * 1993-07-07 1997-04-29 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device with increased breakdown voltage
WO2000079584A1 (en) 1999-06-23 2000-12-28 Telefonaktiebolaget Lm Ericsson (Publ) Semiconductor and manufacturing method for semiconductor
EP1188185A1 (en) * 1999-06-23 2002-03-20 Infineon Technologies AG Semiconductor and manufacturing method for semiconductor

Also Published As

Publication number Publication date
JPS6155775B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-11-29

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