JPS54114190A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54114190A
JPS54114190A JP2191278A JP2191278A JPS54114190A JP S54114190 A JPS54114190 A JP S54114190A JP 2191278 A JP2191278 A JP 2191278A JP 2191278 A JP2191278 A JP 2191278A JP S54114190 A JPS54114190 A JP S54114190A
Authority
JP
Japan
Prior art keywords
type
layer
substrate
wiring
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2191278A
Other languages
Japanese (ja)
Other versions
JPS5828738B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53021912A priority Critical patent/JPS5828738B2/en
Priority to US06/015,427 priority patent/US4353085A/en
Publication of JPS54114190A publication Critical patent/JPS54114190A/en
Publication of JPS5828738B2 publication Critical patent/JPS5828738B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To enhance both the degree of integration and the high frequency properties for the buried oxide layer type MISIC in which the elements are provided only within the ploy-crystal semiconductor layer formed on the oxide layer as well as within the single-crystal semiconductor layer on the semiconductor substrate, by providing newly the lower layer wiring within the substrate.
CONSTITUTION: Oxide film 2 is coated on P+-type semiconductor substrate 1 with the opening drilled, and then P--type single-crystal layer 3, N+-type source region 4' enclosing layer 3 and N+-type drain region 5' are formed on exposed substrate 1. In addition, N+-type source region 4 and N+-type drain region 5 are provided over regions 4' and 5' through film 2, and N+-type wiring layer 9 and the like are formed on film 2 and then covered with PSG film 10 and with the opening drilled and the Al wiring attached. Thus, a MISIC is formed. On the other hand, the fact that substrate functions only to support these regions and no other purposes is noticed, and thus N+-type wiring layer 8 connecting to the element region is provided there. In other words, part of the necessary multilayer wiring is stored within the substrate in order to increase the degree of integration.
COPYRIGHT: (C)1979,JPO&Japio
JP53021912A 1978-02-27 1978-02-27 semiconductor equipment Expired JPS5828738B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP53021912A JPS5828738B2 (en) 1978-02-27 1978-02-27 semiconductor equipment
US06/015,427 US4353085A (en) 1978-02-27 1979-02-26 Integrated semiconductor device having insulated gate field effect transistors with a buried insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53021912A JPS5828738B2 (en) 1978-02-27 1978-02-27 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS54114190A true JPS54114190A (en) 1979-09-06
JPS5828738B2 JPS5828738B2 (en) 1983-06-17

Family

ID=12068294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53021912A Expired JPS5828738B2 (en) 1978-02-27 1978-02-27 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5828738B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49112574A (en) * 1973-02-24 1974-10-26
JPS50107871A (en) * 1974-01-30 1975-08-25

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49112574A (en) * 1973-02-24 1974-10-26
JPS50107871A (en) * 1974-01-30 1975-08-25

Also Published As

Publication number Publication date
JPS5828738B2 (en) 1983-06-17

Similar Documents

Publication Publication Date Title
JPS542077A (en) Semiconductor switching element
JPS559417A (en) Semiconductor integrated circuit
JPS55163877A (en) Semiconductor integrated circuit device
JPS52156580A (en) Semiconductor integrated circuit device and its production
JPS54114190A (en) Semiconductor device
JPS5558561A (en) Semiconductor capacitance element
JPS5413279A (en) Manufacture for semiconductor integrated circuit device
JPS52141580A (en) Manufacture of mos-type semiconductor device
JPS53105385A (en) Manufacture for semiconductor
JPS5441666A (en) Semiconductor integrated circuit element
JPS5378790A (en) Semiconductor integrated circuit device
JPS5268388A (en) Semiconductor integrated circuit
JPS53121490A (en) Semiconductor device
JPS5718354A (en) Semiconductor integrated circuit
JPS5352388A (en) Semiconductor device
JPS53139476A (en) Manufacture of semiconductor device
JPS5384581A (en) Semiconductor integrated circuit
JPS5512772A (en) Semiconductor device
JPS53121482A (en) Semiconductor device
JPS52113184A (en) Semiconductor integrated circuit
JPS547867A (en) Manufacture for semiconductor device
JPS5368181A (en) Semiconductor integrated circuit
JPS5286092A (en) Semiconductor integrated circuit
JPS5320875A (en) Semiconductor integrated circuit device
JPS5434784A (en) Semiconductor integrated circuit device