JPS54111773A - Semiconductor wafer - Google Patents

Semiconductor wafer

Info

Publication number
JPS54111773A
JPS54111773A JP1844078A JP1844078A JPS54111773A JP S54111773 A JPS54111773 A JP S54111773A JP 1844078 A JP1844078 A JP 1844078A JP 1844078 A JP1844078 A JP 1844078A JP S54111773 A JPS54111773 A JP S54111773A
Authority
JP
Japan
Prior art keywords
grooves
photo resist
wafer
target pattern
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1844078A
Other languages
Japanese (ja)
Inventor
Hiroshi Nishizuka
Hiroshi Maejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1844078A priority Critical patent/JPS54111773A/en
Publication of JPS54111773A publication Critical patent/JPS54111773A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To reduce the position shift, by turning all the target pattern constituting grooves to the direction taking 45° to the direction of flowing of photo resist coated in rotation.
CONSTITUTION: The target pattern having a plural number of grooves orthogonal to the unidirectional grooves of plurality to a part away from the center is formed on the wafer, and the direction of groove is taken as 45° to the striaght line tying the wafer center and the target. Thus, in rotary coating of photo resist, the flow 7 of resist makes 45° to the direction of grooves, and the pool 5 and concave 6 are smaller for the photo resist than the case with parallel grooves. Then, the accuracy is increased, by performing the detection of position with the detectors 3a to 3d by means of light amount.
COPYRIGHT: (C)1979,JPO&Japio
JP1844078A 1978-02-22 1978-02-22 Semiconductor wafer Pending JPS54111773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1844078A JPS54111773A (en) 1978-02-22 1978-02-22 Semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1844078A JPS54111773A (en) 1978-02-22 1978-02-22 Semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS54111773A true JPS54111773A (en) 1979-09-01

Family

ID=11971690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1844078A Pending JPS54111773A (en) 1978-02-22 1978-02-22 Semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS54111773A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5215510A (en) * 1975-07-28 1977-02-05 Nippon Chemical Ind Optical glass
JPS52143772A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Alignment method of masks using special reference marks

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5215510A (en) * 1975-07-28 1977-02-05 Nippon Chemical Ind Optical glass
JPS52143772A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Alignment method of masks using special reference marks

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