JPS5411117B2 - - Google Patents

Info

Publication number
JPS5411117B2
JPS5411117B2 JP1922672A JP1922672A JPS5411117B2 JP S5411117 B2 JPS5411117 B2 JP S5411117B2 JP 1922672 A JP1922672 A JP 1922672A JP 1922672 A JP1922672 A JP 1922672A JP S5411117 B2 JPS5411117 B2 JP S5411117B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1922672A
Other versions
JPS4889687A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1922672A priority Critical patent/JPS5411117B2/ja
Priority to GB562073A priority patent/GB1367865A/en
Priority to US00331034A priority patent/US3806830A/en
Publication of JPS4889687A publication Critical patent/JPS4889687A/ja
Publication of JPS5411117B2 publication Critical patent/JPS5411117B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP1922672A 1972-02-23 1972-02-23 Expired JPS5411117B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1922672A JPS5411117B2 (ja) 1972-02-23 1972-02-23
GB562073A GB1367865A (en) 1972-02-23 1973-02-05 Composite semiconductor laser device
US00331034A US3806830A (en) 1972-02-23 1973-02-09 Composite semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1922672A JPS5411117B2 (ja) 1972-02-23 1972-02-23

Publications (2)

Publication Number Publication Date
JPS4889687A JPS4889687A (ja) 1973-11-22
JPS5411117B2 true JPS5411117B2 (ja) 1979-05-11

Family

ID=11993447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1922672A Expired JPS5411117B2 (ja) 1972-02-23 1972-02-23

Country Status (3)

Country Link
US (1) US3806830A (ja)
JP (1) JPS5411117B2 (ja)
GB (1) GB1367865A (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50139680A (ja) * 1974-04-23 1975-11-08
JPS54158B2 (ja) * 1974-06-12 1979-01-06
JPS5171692A (ja) * 1974-12-18 1976-06-21 Nippon Telegraph & Telephone Reezasochi
JPS5215280A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Cleavage semiconductor laser equipped with side surface light take-out waveguide
DE2559265C2 (de) * 1975-12-31 1982-06-09 Tokyo Institute of Technology, Tokyo Halbleiterlaser
US4063189A (en) * 1976-04-08 1977-12-13 Xerox Corporation Leaky wave diode laser
US4185256A (en) * 1978-01-13 1980-01-22 Xerox Corporation Mode control of heterojunction injection lasers and method of fabrication
JPS5541741A (en) * 1978-09-20 1980-03-24 Hitachi Ltd Semiconductor laser device
FR2525034A1 (fr) * 1982-04-09 1983-10-14 Carenco Alain Laser a semiconducteur a coupleur directif permettant une sortie laterale
JPS61296785A (ja) * 1985-06-25 1986-12-27 Sharp Corp 半導体レ−ザアレイ装置
JPS62202584A (ja) * 1986-02-28 1987-09-07 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
EP0237812A3 (de) * 1986-03-20 1988-06-29 Siemens Aktiengesellschaft Halbleiterlaser-Array mit gebündelter Abstrahlung
DE3834929A1 (de) * 1988-10-13 1990-04-19 Siemens Ag Wellenleiterreflektor fuer optoelektronische anwendungen und laser
US10719236B2 (en) * 2015-11-20 2020-07-21 Arm Ltd. Memory controller with non-volatile buffer for persistent memory operations

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3691476A (en) * 1970-12-31 1972-09-12 Bell Telephone Labor Inc Double heterostructure laser diodes
US3733561A (en) * 1971-07-27 1973-05-15 Bell Telephone Labor Inc High power, fundamental transverse mode operation in double heterostructure lasers

Also Published As

Publication number Publication date
GB1367865A (en) 1974-09-25
US3806830A (en) 1974-04-23
JPS4889687A (ja) 1973-11-22

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