JPS54107266A - High-output semiconductor element - Google Patents

High-output semiconductor element

Info

Publication number
JPS54107266A
JPS54107266A JP1423678A JP1423678A JPS54107266A JP S54107266 A JPS54107266 A JP S54107266A JP 1423678 A JP1423678 A JP 1423678A JP 1423678 A JP1423678 A JP 1423678A JP S54107266 A JPS54107266 A JP S54107266A
Authority
JP
Japan
Prior art keywords
diamond
pedestal
cuhs
dhs
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1423678A
Other languages
Japanese (ja)
Inventor
Hideyo Hasumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1423678A priority Critical patent/JPS54107266A/en
Publication of JPS54107266A publication Critical patent/JPS54107266A/en
Pending legal-status Critical Current

Links

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain an output power more reliable than a CuHS-structure element and approximately equivalent to this element by using Ia-type diamond as a heating body.
CONSTITUTION: In DHS structure, the position of pedestal 22 is separated from semiconductor chip 21 because of the interposition of diamond 24, and the heat generated in semiconductor chip 21 extends up to the lower face of diamond 24 and reaches pedestal 22, and as a result, the temperature rise of pedestal 22 does not become large, and it is hard to generate the deterioration of the thermal resistance of the element. Meanwhile, by adopting Ia-type diamond, merits on the reliability of DHS structure are used effectively, and an element superior in the thermal resistance approximately equivalent to CuHS structure can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP1423678A 1978-02-10 1978-02-10 High-output semiconductor element Pending JPS54107266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1423678A JPS54107266A (en) 1978-02-10 1978-02-10 High-output semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1423678A JPS54107266A (en) 1978-02-10 1978-02-10 High-output semiconductor element

Publications (1)

Publication Number Publication Date
JPS54107266A true JPS54107266A (en) 1979-08-22

Family

ID=11855435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1423678A Pending JPS54107266A (en) 1978-02-10 1978-02-10 High-output semiconductor element

Country Status (1)

Country Link
JP (1) JPS54107266A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831875A (en) * 1971-07-30 1973-04-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831875A (en) * 1971-07-30 1973-04-26

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