JPS5371539A - Semiconductor memory unit - Google Patents
Semiconductor memory unitInfo
- Publication number
- JPS5371539A JPS5371539A JP14651476A JP14651476A JPS5371539A JP S5371539 A JPS5371539 A JP S5371539A JP 14651476 A JP14651476 A JP 14651476A JP 14651476 A JP14651476 A JP 14651476A JP S5371539 A JPS5371539 A JP S5371539A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor memory
- memory unit
- sectioned
- arranging
- areas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Abstract
PURPOSE:To speed up the information delivery, by arranging the switching MISFET on the common data line so that the memory array is sectioned into a plural number of areas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51146514A JPS6013214B2 (en) | 1976-12-08 | 1976-12-08 | semiconductor storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51146514A JPS6013214B2 (en) | 1976-12-08 | 1976-12-08 | semiconductor storage device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59089448A Division JPS59229790A (en) | 1984-05-07 | 1984-05-07 | Semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5371539A true JPS5371539A (en) | 1978-06-26 |
JPS6013214B2 JPS6013214B2 (en) | 1985-04-05 |
Family
ID=15409353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51146514A Expired JPS6013214B2 (en) | 1976-12-08 | 1976-12-08 | semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6013214B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5593587A (en) * | 1978-12-29 | 1980-07-16 | Fujitsu Ltd | Sense amplifier circuit of mos memory |
EP0069588A2 (en) * | 1981-07-08 | 1983-01-12 | Kabushiki Kaisha Toshiba | Semiconductor integrated memory circuit |
-
1976
- 1976-12-08 JP JP51146514A patent/JPS6013214B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5593587A (en) * | 1978-12-29 | 1980-07-16 | Fujitsu Ltd | Sense amplifier circuit of mos memory |
EP0069588A2 (en) * | 1981-07-08 | 1983-01-12 | Kabushiki Kaisha Toshiba | Semiconductor integrated memory circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS6013214B2 (en) | 1985-04-05 |
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