JPS5367361A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5367361A
JPS5367361A JP14252776A JP14252776A JPS5367361A JP S5367361 A JPS5367361 A JP S5367361A JP 14252776 A JP14252776 A JP 14252776A JP 14252776 A JP14252776 A JP 14252776A JP S5367361 A JPS5367361 A JP S5367361A
Authority
JP
Japan
Prior art keywords
semiconductor device
field region
recoiling
ion
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14252776A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5525512B2 (https=
Inventor
Takashi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14252776A priority Critical patent/JPS5367361A/ja
Priority to GB47608/77A priority patent/GB1596184A/en
Priority to DE19772752698 priority patent/DE2752698A1/de
Priority to NL7713004A priority patent/NL7713004A/xx
Publication of JPS5367361A publication Critical patent/JPS5367361A/ja
Priority to US06/109,100 priority patent/US4297782A/en
Publication of JPS5525512B2 publication Critical patent/JPS5525512B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP14252776A 1976-11-27 1976-11-27 Semiconductor device Granted JPS5367361A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14252776A JPS5367361A (en) 1976-11-27 1976-11-27 Semiconductor device
GB47608/77A GB1596184A (en) 1976-11-27 1977-11-16 Method of manufacturing semiconductor devices
DE19772752698 DE2752698A1 (de) 1976-11-27 1977-11-25 Verfahren zur herstellung von halbleitervorrichtungen
NL7713004A NL7713004A (nl) 1976-11-27 1977-11-25 Werkwijze voor het vervaardigen van halfgelei- derinrichtingen.
US06/109,100 US4297782A (en) 1976-11-27 1980-01-02 Method of manufacturing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14252776A JPS5367361A (en) 1976-11-27 1976-11-27 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5367361A true JPS5367361A (en) 1978-06-15
JPS5525512B2 JPS5525512B2 (https=) 1980-07-07

Family

ID=15317421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14252776A Granted JPS5367361A (en) 1976-11-27 1976-11-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5367361A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4643777A (en) * 1983-12-20 1987-02-17 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device comprising resistors of high and low resistances
JPS62263658A (ja) * 1986-05-12 1987-11-16 Toshiba Corp 半導体装置およびその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861667U (ja) * 1981-10-22 1983-04-26 いすゞ自動車株式会社 ハンドブレ−キの操作装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4643777A (en) * 1983-12-20 1987-02-17 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device comprising resistors of high and low resistances
JPS62263658A (ja) * 1986-05-12 1987-11-16 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS5525512B2 (https=) 1980-07-07

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