JPS5346621B2 - - Google Patents

Info

Publication number
JPS5346621B2
JPS5346621B2 JP12026574A JP12026574A JPS5346621B2 JP S5346621 B2 JPS5346621 B2 JP S5346621B2 JP 12026574 A JP12026574 A JP 12026574A JP 12026574 A JP12026574 A JP 12026574A JP S5346621 B2 JPS5346621 B2 JP S5346621B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12026574A
Other versions
JPS5146841A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12026574A priority Critical patent/JPS5346621B2/ja
Priority to US05/619,890 priority patent/US4057788A/en
Publication of JPS5146841A publication Critical patent/JPS5146841A/ja
Publication of JPS5346621B2 publication Critical patent/JPS5346621B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
JP12026574A 1974-10-21 1974-10-21 Expired JPS5346621B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12026574A JPS5346621B2 (ja) 1974-10-21 1974-10-21
US05/619,890 US4057788A (en) 1974-10-21 1975-10-06 Semiconductor memory structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12026574A JPS5346621B2 (ja) 1974-10-21 1974-10-21

Publications (2)

Publication Number Publication Date
JPS5146841A JPS5146841A (ja) 1976-04-21
JPS5346621B2 true JPS5346621B2 (ja) 1978-12-15

Family

ID=14781921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12026574A Expired JPS5346621B2 (ja) 1974-10-21 1974-10-21

Country Status (2)

Country Link
US (1) US4057788A (ja)
JP (1) JPS5346621B2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5697669U (ja) * 1979-12-25 1981-08-03
WO1995002884A1 (fr) * 1993-07-13 1995-01-26 Nkk Corporation Element de memoire, memoire non volatile, dispositif de stockage non volatil et methode de stockage d'informations par ce dispositif

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938655B2 (ja) * 1979-05-14 1984-09-18 日本放送協会 半導体デイスクメモリ装置
US4378595A (en) * 1980-03-25 1983-03-29 The Regents Of The University Of California Synchronous multivalued latch
JPS59106152A (ja) * 1982-12-10 1984-06-19 Nec Corp 半導体装置
JPS59121696A (ja) * 1982-12-28 1984-07-13 Toshiba Corp 不揮発性半導体メモリ
US5060034A (en) * 1988-11-01 1991-10-22 Casio Computer Co., Ltd. Memory device using thin film transistors having an insulation film with si/n composition ratio of 0.85 to 1.1
FR2652671B1 (fr) * 1989-09-29 1993-11-12 Centre Suisse Electro Microtechn Procede de memorisation de grandeurs analogiques et dispositif pour sa mise en óoeuvre.
US5239500A (en) * 1989-09-29 1993-08-24 Centre Suisse D'electronique Et De Microtechnique S.A. Process of storing analog quantities and device for the implementation thereof
US5339270A (en) * 1993-06-23 1994-08-16 Vlsi Technology, Inc. AC drain voltage charging source for PROM devices
US5424992A (en) * 1993-08-25 1995-06-13 Texas Instruments Incorporated, A Delaware Corporation Method and device for detecting and controlling an array source signal discharge for a memory erase operation
KR0169267B1 (ko) * 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3635681B2 (ja) * 1994-07-15 2005-04-06 ソニー株式会社 バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法
US5694356A (en) * 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
US6353554B1 (en) * 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5680341A (en) * 1996-01-16 1997-10-21 Invoice Technology Pipelined record and playback for analog non-volatile memory
DE59704729D1 (de) * 1996-08-01 2001-10-31 Infineon Technologies Ag Verfahren zum betrieb einer speicherzellenanordnung
US5982659A (en) * 1996-12-23 1999-11-09 Lsi Logic Corporation Memory cell capable of storing more than two logic states by using different via resistances
US5761110A (en) * 1996-12-23 1998-06-02 Lsi Logic Corporation Memory cell capable of storing more than two logic states by using programmable resistances
US5808932A (en) * 1996-12-23 1998-09-15 Lsi Logic Corporation Memory system which enables storage and retrieval of more than two states in a memory cell
US5771187A (en) * 1996-12-23 1998-06-23 Lsi Logic Corporation Multiple level storage DRAM cell
US5784328A (en) * 1996-12-23 1998-07-21 Lsi Logic Corporation Memory system including an on-chip temperature sensor for regulating the refresh rate of a DRAM array
US5847990A (en) * 1996-12-23 1998-12-08 Lsi Logic Corporation Ram cell capable of storing 3 logic states
US5867423A (en) * 1997-04-10 1999-02-02 Lsi Logic Corporation Memory circuit and method for multivalued logic storage by process variations
US5841695A (en) * 1997-05-29 1998-11-24 Lsi Logic Corporation Memory system using multiple storage mechanisms to enable storage and retrieval of more than two states in a memory cell
US5956350A (en) * 1997-10-27 1999-09-21 Lsi Logic Corporation Built in self repair for DRAMs using on-chip temperature sensing and heating
US6606267B2 (en) 1998-06-23 2003-08-12 Sandisk Corporation High data rate write process for non-volatile flash memories
US5969986A (en) * 1998-06-23 1999-10-19 Invox Technology High-bandwidth read and write architectures for non-volatile memories
US5909404A (en) * 1998-03-27 1999-06-01 Lsi Logic Corporation Refresh sampling built-in self test and repair circuit
EP0971361B1 (en) 1998-06-23 2003-12-10 SanDisk Corporation High data rate write process for non-volatile flash memories
US6897522B2 (en) * 2001-10-31 2005-05-24 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6925007B2 (en) * 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US8139412B2 (en) * 2007-10-31 2012-03-20 Agere Systems Inc. Systematic error correction for multi-level flash memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623023A (en) * 1967-12-01 1971-11-23 Sperry Rand Corp Variable threshold transistor memory using pulse coincident writing
US3653002A (en) * 1970-03-02 1972-03-28 Ncr Co Nonvolatile memory cell
US3846768A (en) * 1972-12-29 1974-11-05 Ibm Fixed threshold variable threshold storage device for use in a semiconductor storage array
US3832700A (en) * 1973-04-24 1974-08-27 Westinghouse Electric Corp Ferroelectric memory device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5697669U (ja) * 1979-12-25 1981-08-03
WO1995002884A1 (fr) * 1993-07-13 1995-01-26 Nkk Corporation Element de memoire, memoire non volatile, dispositif de stockage non volatil et methode de stockage d'informations par ce dispositif
GB2285528A (en) * 1993-07-13 1995-07-12 Nippon Kokan Kk Memory element, monvolatile memory, nonvolatile storage device, and method for storing information by use of the storage device
US5623442A (en) * 1993-07-13 1997-04-22 Nkk Corporation Memory cells and memory devices with a storage capacitor of parasitic capacitance and information storing method using the same
GB2285528B (en) * 1993-07-13 1997-08-06 Nippon Kokan Kk A memory element and a method of storing information therein

Also Published As

Publication number Publication date
JPS5146841A (ja) 1976-04-21
US4057788A (en) 1977-11-08

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