JPS5938655B2
(ja)
*
|
1979-05-14 |
1984-09-18 |
日本放送協会 |
半導体デイスクメモリ装置
|
JPS5697669U
(ja)
*
|
1979-12-25 |
1981-08-03 |
|
|
US4378595A
(en)
*
|
1980-03-25 |
1983-03-29 |
The Regents Of The University Of California |
Synchronous multivalued latch
|
JPS59106152A
(ja)
*
|
1982-12-10 |
1984-06-19 |
Nec Corp |
半導体装置
|
US5060034A
(en)
*
|
1988-11-01 |
1991-10-22 |
Casio Computer Co., Ltd. |
Memory device using thin film transistors having an insulation film with si/n composition ratio of 0.85 to 1.1
|
US5239500A
(en)
*
|
1989-09-29 |
1993-08-24 |
Centre Suisse D'electronique Et De Microtechnique S.A. |
Process of storing analog quantities and device for the implementation thereof
|
FR2652671B1
(fr)
*
|
1989-09-29 |
1993-11-12 |
Centre Suisse Electro Microtechn |
Procede de memorisation de grandeurs analogiques et dispositif pour sa mise en óoeuvre.
|
US5339270A
(en)
*
|
1993-06-23 |
1994-08-16 |
Vlsi Technology, Inc. |
AC drain voltage charging source for PROM devices
|
JPH0778484A
(ja)
*
|
1993-07-13 |
1995-03-20 |
Nkk Corp |
記憶素子、不揮発性メモリ、不揮発性記憶装置及びそれを用いた情報記憶方法
|
US5424992A
(en)
*
|
1993-08-25 |
1995-06-13 |
Texas Instruments Incorporated, A Delaware Corporation |
Method and device for detecting and controlling an array source signal discharge for a memory erase operation
|
KR0169267B1
(ko)
*
|
1993-09-21 |
1999-02-01 |
사토 후미오 |
불휘발성 반도체 기억장치
|
JP3635681B2
(ja)
*
|
1994-07-15 |
2005-04-06 |
ソニー株式会社 |
バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法
|
US5694356A
(en)
*
|
1994-11-02 |
1997-12-02 |
Invoice Technology, Inc. |
High resolution analog storage EPROM and flash EPROM
|
US6353554B1
(en)
|
1995-02-27 |
2002-03-05 |
Btg International Inc. |
Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
|
US5680341A
(en)
*
|
1996-01-16 |
1997-10-21 |
Invoice Technology |
Pipelined record and playback for analog non-volatile memory
|
WO1998006101A1
(de)
*
|
1996-08-01 |
1998-02-12 |
Siemens Aktiengesellschaft |
Verfahren zum betrieb einer speicherzellenanordnung
|
US5847990A
(en)
*
|
1996-12-23 |
1998-12-08 |
Lsi Logic Corporation |
Ram cell capable of storing 3 logic states
|
US5761110A
(en)
*
|
1996-12-23 |
1998-06-02 |
Lsi Logic Corporation |
Memory cell capable of storing more than two logic states by using programmable resistances
|
US5784328A
(en)
*
|
1996-12-23 |
1998-07-21 |
Lsi Logic Corporation |
Memory system including an on-chip temperature sensor for regulating the refresh rate of a DRAM array
|
US5982659A
(en)
*
|
1996-12-23 |
1999-11-09 |
Lsi Logic Corporation |
Memory cell capable of storing more than two logic states by using different via resistances
|
US5771187A
(en)
*
|
1996-12-23 |
1998-06-23 |
Lsi Logic Corporation |
Multiple level storage DRAM cell
|
US5808932A
(en)
*
|
1996-12-23 |
1998-09-15 |
Lsi Logic Corporation |
Memory system which enables storage and retrieval of more than two states in a memory cell
|
US5867423A
(en)
*
|
1997-04-10 |
1999-02-02 |
Lsi Logic Corporation |
Memory circuit and method for multivalued logic storage by process variations
|
US5841695A
(en)
*
|
1997-05-29 |
1998-11-24 |
Lsi Logic Corporation |
Memory system using multiple storage mechanisms to enable storage and retrieval of more than two states in a memory cell
|
US5956350A
(en)
*
|
1997-10-27 |
1999-09-21 |
Lsi Logic Corporation |
Built in self repair for DRAMs using on-chip temperature sensing and heating
|
US5969986A
(en)
*
|
1998-06-23 |
1999-10-19 |
Invox Technology |
High-bandwidth read and write architectures for non-volatile memories
|
US6606267B2
(en)
*
|
1998-06-23 |
2003-08-12 |
Sandisk Corporation |
High data rate write process for non-volatile flash memories
|
US5909404A
(en)
*
|
1998-03-27 |
1999-06-01 |
Lsi Logic Corporation |
Refresh sampling built-in self test and repair circuit
|
EP0971361B1
(en)
|
1998-06-23 |
2003-12-10 |
SanDisk Corporation |
High data rate write process for non-volatile flash memories
|
US6925007B2
(en)
*
|
2001-10-31 |
2005-08-02 |
Sandisk Corporation |
Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
|
US6897522B2
(en)
*
|
2001-10-31 |
2005-05-24 |
Sandisk Corporation |
Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
|
US8139412B2
(en)
*
|
2007-10-31 |
2012-03-20 |
Agere Systems Inc. |
Systematic error correction for multi-level flash memory
|