JPS5342572A - Charge transfer type semiconductor device - Google Patents

Charge transfer type semiconductor device

Info

Publication number
JPS5342572A
JPS5342572A JP11749876A JP11749876A JPS5342572A JP S5342572 A JPS5342572 A JP S5342572A JP 11749876 A JP11749876 A JP 11749876A JP 11749876 A JP11749876 A JP 11749876A JP S5342572 A JPS5342572 A JP S5342572A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
charge transfer
transfer type
transfer channels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11749876A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5733870B2 (enExample
Inventor
Koichi Nagasawa
Michihiro Yamada
Kazuyasu Fujishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11749876A priority Critical patent/JPS5342572A/ja
Publication of JPS5342572A publication Critical patent/JPS5342572A/ja
Publication of JPS5733870B2 publication Critical patent/JPS5733870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP11749876A 1976-09-29 1976-09-29 Charge transfer type semiconductor device Granted JPS5342572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11749876A JPS5342572A (en) 1976-09-29 1976-09-29 Charge transfer type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11749876A JPS5342572A (en) 1976-09-29 1976-09-29 Charge transfer type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5342572A true JPS5342572A (en) 1978-04-18
JPS5733870B2 JPS5733870B2 (enExample) 1982-07-20

Family

ID=14713214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11749876A Granted JPS5342572A (en) 1976-09-29 1976-09-29 Charge transfer type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5342572A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6471390A (en) * 1987-09-11 1989-03-16 Matsushita Electric Industrial Co Ltd Orthogonal conversion encoding device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0546519U (ja) * 1991-11-29 1993-06-22 日産車体株式会社 ドアロック装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6471390A (en) * 1987-09-11 1989-03-16 Matsushita Electric Industrial Co Ltd Orthogonal conversion encoding device

Also Published As

Publication number Publication date
JPS5733870B2 (enExample) 1982-07-20

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