JPS5339857A - Method of making injected domin in substrate - Google Patents

Method of making injected domin in substrate

Info

Publication number
JPS5339857A
JPS5339857A JP11314977A JP11314977A JPS5339857A JP S5339857 A JPS5339857 A JP S5339857A JP 11314977 A JP11314977 A JP 11314977A JP 11314977 A JP11314977 A JP 11314977A JP S5339857 A JPS5339857 A JP S5339857A
Authority
JP
Japan
Prior art keywords
domin
substrate
making injected
injected
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11314977A
Other languages
English (en)
Inventor
Kurimumeru Eeberuharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5339857A publication Critical patent/JPS5339857A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/061—Gettering-armorphous layers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP11314977A 1976-09-22 1977-09-20 Method of making injected domin in substrate Pending JPS5339857A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762642599 DE2642599A1 (de) 1976-09-22 1976-09-22 Verfahren zur herstellung von implantierten gebieten in einem substrat

Publications (1)

Publication Number Publication Date
JPS5339857A true JPS5339857A (en) 1978-04-12

Family

ID=5988545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11314977A Pending JPS5339857A (en) 1976-09-22 1977-09-20 Method of making injected domin in substrate

Country Status (8)

Country Link
US (1) US4137457A (ja)
JP (1) JPS5339857A (ja)
BE (1) BE858959A (ja)
DE (1) DE2642599A1 (ja)
FR (1) FR2365881A1 (ja)
GB (1) GB1544051A (ja)
IT (1) IT1086095B (ja)
NL (1) NL7710359A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117644A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法
JPH036357A (ja) * 1989-06-02 1991-01-11 Shimizu:Kk 浸漬はんだめつき浴

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
GB9225270D0 (en) * 1992-12-03 1993-01-27 Gec Ferranti Defence Syst Depositing different materials on a substrate
FR2775797B1 (fr) * 1998-03-04 2000-03-31 Commissariat Energie Atomique Dispositif et procede de formation de motifs de lithographie utilisant un interferometre
US20130114773A1 (en) * 2011-11-08 2013-05-09 Alexander R. Vaucher Superconducting neutron source

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2741704A (en) * 1953-06-22 1956-04-10 High Voltage Engineering Corp Irradiation method and apparatus
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US3445926A (en) * 1967-02-28 1969-05-27 Electro Optical Systems Inc Production of semiconductor devices by use of ion beam implantation
US3761721A (en) * 1972-07-06 1973-09-25 Trw Inc Matter wave interferometric apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117644A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法
JPH0126538B2 (ja) * 1983-11-30 1989-05-24 Fujitsu Ltd
JPH036357A (ja) * 1989-06-02 1991-01-11 Shimizu:Kk 浸漬はんだめつき浴

Also Published As

Publication number Publication date
DE2642599A1 (de) 1978-03-23
FR2365881B1 (ja) 1980-04-25
GB1544051A (en) 1979-04-11
FR2365881A1 (fr) 1978-04-21
BE858959A (fr) 1978-01-16
IT1086095B (it) 1985-05-28
NL7710359A (nl) 1978-03-28
US4137457A (en) 1979-01-30

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