JPS5338597B1 - - Google Patents
Info
- Publication number
- JPS5338597B1 JPS5338597B1 JP790471A JP790471A JPS5338597B1 JP S5338597 B1 JPS5338597 B1 JP S5338597B1 JP 790471 A JP790471 A JP 790471A JP 790471 A JP790471 A JP 790471A JP S5338597 B1 JPS5338597 B1 JP S5338597B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
- H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2007752A DE2007752B2 (de) | 1970-02-19 | 1970-02-19 | Verfahren zum Herstellen von dotiertem Halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5338597B1 true JPS5338597B1 (enExample) | 1978-10-16 |
Family
ID=5762769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP790471A Pending JPS5338597B1 (enExample) | 1970-02-19 | 1971-02-19 |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5338597B1 (enExample) |
| AT (1) | AT338335B (enExample) |
| CH (1) | CH519249A (enExample) |
| DE (1) | DE2007752B2 (enExample) |
| FR (1) | FR2080610B1 (enExample) |
| GB (1) | GB1289432A (enExample) |
| NL (1) | NL7102176A (enExample) |
| SE (1) | SE366227B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2262021C2 (de) * | 1972-12-19 | 1982-12-30 | Degussa Ag, 6000 Frankfurt | Verfahren zur Dotierung von Halbleitersilicium |
| DE3375253D1 (de) * | 1982-09-23 | 1988-02-11 | Allied Corp | Polymeric boron-nitrogen dopant |
| JPH01135017A (ja) * | 1987-11-20 | 1989-05-26 | Fujitsu Ltd | 半導体装置の製造方法 |
| DE4013929C2 (de) * | 1989-05-02 | 1995-12-07 | Toshiba Kawasaki Kk | Verfahren zum Einbringen von Störstoffen in eine Halbleitermaterial-Schicht beim Herstellen eines Halbleiterbauelements und Anwendung des Verfahrens |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3084079A (en) * | 1960-10-13 | 1963-04-02 | Pacific Semiconductors Inc | Manufacture of semiconductor devices |
| US3355291A (en) * | 1963-10-08 | 1967-11-28 | Texas Instruments Inc | Application of glass to semiconductor devices |
| US3514348A (en) * | 1967-05-10 | 1970-05-26 | Ncr Co | Method for making semiconductor devices |
| JPS4822536B1 (enExample) * | 1969-03-20 | 1973-07-06 |
-
1970
- 1970-02-19 DE DE2007752A patent/DE2007752B2/de active Granted
-
1971
- 1971-02-01 AT AT82571A patent/AT338335B/de not_active IP Right Cessation
- 1971-02-03 CH CH158671A patent/CH519249A/de not_active IP Right Cessation
- 1971-02-16 FR FR7105142A patent/FR2080610B1/fr not_active Expired
- 1971-02-18 NL NL7102176A patent/NL7102176A/xx unknown
- 1971-02-19 SE SE02166/71A patent/SE366227B/xx unknown
- 1971-02-19 JP JP790471A patent/JPS5338597B1/ja active Pending
- 1971-04-19 GB GB1289432D patent/GB1289432A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2080610B1 (enExample) | 1976-04-16 |
| DE2007752A1 (de) | 1971-08-26 |
| DE2007752B2 (de) | 1978-07-27 |
| GB1289432A (enExample) | 1972-09-20 |
| FR2080610A1 (enExample) | 1971-11-19 |
| AT338335B (de) | 1977-08-25 |
| NL7102176A (enExample) | 1971-08-23 |
| SE366227B (enExample) | 1974-04-22 |
| ATA82571A (de) | 1976-12-15 |
| DE2007752C3 (enExample) | 1979-04-05 |
| CH519249A (de) | 1972-02-15 |