JPS5334464B2 - - Google Patents
Info
- Publication number
- JPS5334464B2 JPS5334464B2 JP12513476A JP12513476A JPS5334464B2 JP S5334464 B2 JPS5334464 B2 JP S5334464B2 JP 12513476 A JP12513476 A JP 12513476A JP 12513476 A JP12513476 A JP 12513476A JP S5334464 B2 JPS5334464 B2 JP S5334464B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12513476A JPS5350680A (en) | 1976-10-19 | 1976-10-19 | Transfer mask for x-ray exposure and its production |
| US05/843,485 US4152601A (en) | 1976-10-19 | 1977-10-19 | X-ray lithography mask and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12513476A JPS5350680A (en) | 1976-10-19 | 1976-10-19 | Transfer mask for x-ray exposure and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5350680A JPS5350680A (en) | 1978-05-09 |
| JPS5334464B2 true JPS5334464B2 (US06373033-20020416-M00071.png) | 1978-09-20 |
Family
ID=14902689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12513476A Granted JPS5350680A (en) | 1976-10-19 | 1976-10-19 | Transfer mask for x-ray exposure and its production |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4152601A (US06373033-20020416-M00071.png) |
| JP (1) | JPS5350680A (US06373033-20020416-M00071.png) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4253029A (en) * | 1979-05-23 | 1981-02-24 | Bell Telephone Laboratories, Incorporated | Mask structure for x-ray lithography |
| EP0048291B1 (de) * | 1980-09-19 | 1985-07-03 | Ibm Deutschland Gmbh | Struktur mit einem eine durchgehende Öffnung aufweisenden Siliciumkörper und Verfahren zu ihrer Herstellung |
| US4453086A (en) * | 1981-12-31 | 1984-06-05 | International Business Machines Corporation | Electron beam system with reduced charge buildup |
| DE3232498A1 (de) * | 1982-09-01 | 1984-03-01 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung |
| US4587184A (en) * | 1983-07-27 | 1986-05-06 | Siemens Aktiengesellschaft | Method for manufacturing accurate structures with a high aspect ratio and particularly for manufacturing X-ray absorber masks |
| JPH0715877B2 (ja) * | 1985-07-19 | 1995-02-22 | 日本電信電話株式会社 | Ｘ線マスク |
| CN1003524B (zh) * | 1985-10-14 | 1989-03-08 | 株式会社日立制作所 | 无电浸镀金溶液 |
| JPH0746681B2 (ja) * | 1986-10-28 | 1995-05-17 | 富士通株式会社 | Ｘ線ステッパー用マスクの製造方法 |
| JP2801270B2 (ja) * | 1989-07-13 | 1998-09-21 | キヤノン株式会社 | マスク作成方法 |
| US5262257A (en) * | 1989-07-13 | 1993-11-16 | Canon Kabushiki Kaisha | Mask for lithography |
| US5124561A (en) * | 1991-04-04 | 1992-06-23 | International Business Machines Corporation | Process for X-ray mask warpage reduction |
| ATE184711T1 (de) * | 1991-11-15 | 1999-10-15 | Canon Kk | Röntgenstrahlmaskenstruktur und - belichtungsverfahren sowie damit hergestelltes halbleiterbauelement und herstellungsverfahren für die röntgenstrahlmaskenstruktur |
| US5570405A (en) * | 1995-06-06 | 1996-10-29 | International Business Machines Corporation | Registration and alignment technique for X-ray mask fabrication |
| KR19980017722A (ko) * | 1996-08-31 | 1998-06-05 | 구자홍 | 엑스(x)-선 리소그래피용 마스크 및 그 제조방법 |
| JPH11260701A (ja) * | 1998-03-13 | 1999-09-24 | Tokyo Inst Of Technol | 電子ビーム露光の位置合わせマーク |
| US6859330B2 (en) * | 2003-06-04 | 2005-02-22 | Intel Corporation | Micromachined pellicle splitters and tunable laser modules incorporating same |
| DE10339823B4 (de) * | 2003-08-25 | 2005-06-16 | Hahn-Meitner-Institut Berlin Gmbh | Verwendung eines Fensters in einer Ultrahochvakuum-Kammer |
| KR101095681B1 (ko) * | 2008-12-26 | 2011-12-19 | 주식회사 하이닉스반도체 | 극자외선 리소그래피를 위한 포토마스크 및 그 제조방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3743842A (en) * | 1972-01-14 | 1973-07-03 | Massachusetts Inst Technology | Soft x-ray lithographic apparatus and process |
| US3742230A (en) * | 1972-06-29 | 1973-06-26 | Massachusetts Inst Technology | Soft x-ray mask support substrate |
| US3742229A (en) * | 1972-06-29 | 1973-06-26 | Massachusetts Inst Technology | Soft x-ray mask alignment system |
| US3873824A (en) * | 1973-10-01 | 1975-03-25 | Texas Instruments Inc | X-ray lithography mask |
-
1976
- 1976-10-19 JP JP12513476A patent/JPS5350680A/ja active Granted
-
1977
- 1977-10-19 US US05/843,485 patent/US4152601A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5350680A (en) | 1978-05-09 |
| US4152601A (en) | 1979-05-01 |
