JPS532599B2 - - Google Patents

Info

Publication number
JPS532599B2
JPS532599B2 JP10795172A JP10795172A JPS532599B2 JP S532599 B2 JPS532599 B2 JP S532599B2 JP 10795172 A JP10795172 A JP 10795172A JP 10795172 A JP10795172 A JP 10795172A JP S532599 B2 JPS532599 B2 JP S532599B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10795172A
Other languages
Japanese (ja)
Other versions
JPS4966396A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10795172A priority Critical patent/JPS532599B2/ja
Priority to US409970A priority patent/US3881108A/en
Priority to FR7338544A priority patent/FR2204884B1/fr
Publication of JPS4966396A publication Critical patent/JPS4966396A/ja
Publication of JPS532599B2 publication Critical patent/JPS532599B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H01J37/256—Tubes for spot-analysing by electron or ion beams; Microanalysers using scanning beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP10795172A 1972-10-30 1972-10-30 Expired JPS532599B2 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10795172A JPS532599B2 (zh) 1972-10-30 1972-10-30
US409970A US3881108A (en) 1972-10-30 1973-10-26 Ion microprobe analyzer
FR7338544A FR2204884B1 (zh) 1972-10-30 1973-10-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10795172A JPS532599B2 (zh) 1972-10-30 1972-10-30

Publications (2)

Publication Number Publication Date
JPS4966396A JPS4966396A (zh) 1974-06-27
JPS532599B2 true JPS532599B2 (zh) 1978-01-30

Family

ID=14472173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10795172A Expired JPS532599B2 (zh) 1972-10-30 1972-10-30

Country Status (3)

Country Link
US (1) US3881108A (zh)
JP (1) JPS532599B2 (zh)
FR (1) FR2204884B1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015227779A (ja) * 2014-05-30 2015-12-17 富士通株式会社 二次イオン質量分析装置の制御方法及び制御プログラム、二次イオン質量分析装置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916190A (en) * 1974-03-01 1975-10-28 Minnesota Mining & Mfg Depth profile analysis apparatus
JPS5646299Y2 (zh) * 1974-12-09 1981-10-29
USRE33193E (en) * 1981-09-30 1990-04-03 Hitachi, Ltd. Ion beam processing apparatus and method of correcting mask defects
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS5871541A (ja) * 1981-10-23 1983-04-28 Hitachi Ltd イオンマイクロアナライザ
DE3240653A1 (de) * 1982-11-04 1984-05-10 Dr.-Ing. Rudolf Hell Gmbh, 2300 Kiel Verfahren zur kontrolle von mittels elektronenstrahlgravierten druckformoberflaechen
DE3335625A1 (de) * 1983-09-30 1985-04-11 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zur speicherung der messdaten aus teilbereichen eines sputterkraters, der in einem sekundaerionen-massenspektrometer erzeugt und analysiert wird
US4661702A (en) * 1984-10-24 1987-04-28 The Perkin-Elmer Corporation Primary ion beam raster gating technique for secondary ion mass spectrometer system
US4874946A (en) * 1985-04-30 1989-10-17 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for analyzing the internal chemistry and compositional variations of materials and devices
US4719349A (en) * 1986-05-27 1988-01-12 The United States Of America As Represented By The Department Of Health And Human Services Electrochemical sample probe for use in fast-atom bombardment mass spectrometry
DE3636506A1 (de) * 1986-10-27 1988-04-28 Atomika Tech Physik Gmbh Spiralabtastverfahren
JP2585616B2 (ja) * 1987-08-12 1997-02-26 株式会社日立製作所 二次イオン質量分析計方法
JPH02183150A (ja) * 1989-01-09 1990-07-17 Hitachi Ltd イオンの質量分析法および装置
DE4421517A1 (de) * 1993-06-28 1995-01-05 Schlumberger Technologies Inc Verfahren zum Abtrag oder Auftrag von Material mittels eines Partikelstrahls und Vorrichtung zu seiner Durchführung
CN101091101A (zh) * 2004-12-27 2007-12-19 新科实业有限公司 通过俄歇电子能谱测量纳米薄膜厚度的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3502870A (en) * 1967-07-05 1970-03-24 Hitachi Ltd Apparatus for simultaneously displaying a plurality of images of an object being analyzed in an electron beam device
US3614311A (en) * 1968-02-28 1971-10-19 Hitachi Ltd Apparatus for simultaneously displaying a plurality of images of an object being analyzed in an electron beam device
US3600573A (en) * 1968-10-09 1971-08-17 Jeol Ltd Ion beam intensity control with pulsed beam deflection and synchronized ion source blanking
JPS5034439B1 (zh) * 1969-05-16 1975-11-08

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015227779A (ja) * 2014-05-30 2015-12-17 富士通株式会社 二次イオン質量分析装置の制御方法及び制御プログラム、二次イオン質量分析装置

Also Published As

Publication number Publication date
US3881108A (en) 1975-04-29
FR2204884A1 (zh) 1974-05-24
FR2204884B1 (zh) 1977-05-27
JPS4966396A (zh) 1974-06-27

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