JPS5325789B2 - - Google Patents
Info
- Publication number
- JPS5325789B2 JPS5325789B2 JP463475A JP463475A JPS5325789B2 JP S5325789 B2 JPS5325789 B2 JP S5325789B2 JP 463475 A JP463475 A JP 463475A JP 463475 A JP463475 A JP 463475A JP S5325789 B2 JPS5325789 B2 JP S5325789B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US431211A US3928096A (en) | 1974-01-07 | 1974-01-07 | Boron doping of semiconductors |
| US431212A US3907618A (en) | 1974-01-07 | 1974-01-07 | Process for doping semiconductor employing glass-ceramic dopant |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50122171A JPS50122171A (ja) | 1975-09-25 |
| JPS5325789B2 true JPS5325789B2 (ja) | 1978-07-28 |
Family
ID=27028937
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP463475A Expired JPS5325789B2 (ja) | 1974-01-07 | 1975-01-07 | |
| JP6367776A Granted JPS5255861A (en) | 1974-01-07 | 1976-06-02 | Method of doping semiconductor and dopant host |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6367776A Granted JPS5255861A (en) | 1974-01-07 | 1976-06-02 | Method of doping semiconductor and dopant host |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JPS5325789B2 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59124186U (ja) * | 1983-02-10 | 1984-08-21 | 三菱鉛筆株式会社 | ノツク式シヤ−プペンシル |
| WO2009060761A1 (ja) | 2007-11-09 | 2009-05-14 | Nippon Electric Glass Co., Ltd. | ドーパントホストおよびその製造方法 |
| JP5382606B2 (ja) * | 2007-12-25 | 2014-01-08 | 日本電気硝子株式会社 | 半導体用ホウ素ドープ材の製造方法 |
| JP5476849B2 (ja) * | 2008-08-20 | 2014-04-23 | 日本電気硝子株式会社 | ドーパントホスト |
| US8828550B2 (en) | 2009-11-24 | 2014-09-09 | Nippon Electric Glass Co., Ltd. | Dopant host and process for production thereof |
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1975
- 1975-01-07 JP JP463475A patent/JPS5325789B2/ja not_active Expired
-
1976
- 1976-06-02 JP JP6367776A patent/JPS5255861A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5531611B2 (ja) | 1980-08-19 |
| JPS50122171A (ja) | 1975-09-25 |
| JPS5255861A (en) | 1977-05-07 |