JPS5321838B2 - - Google Patents

Info

Publication number
JPS5321838B2
JPS5321838B2 JP2317573A JP2317573A JPS5321838B2 JP S5321838 B2 JPS5321838 B2 JP S5321838B2 JP 2317573 A JP2317573 A JP 2317573A JP 2317573 A JP2317573 A JP 2317573A JP S5321838 B2 JPS5321838 B2 JP S5321838B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2317573A
Other versions
JPS49114380A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2317573A priority Critical patent/JPS5321838B2/ja
Priority to GB890874A priority patent/GB1438232A/en
Priority to US05/446,793 priority patent/US4080616A/en
Publication of JPS49114380A publication Critical patent/JPS49114380A/ja
Publication of JPS5321838B2 publication Critical patent/JPS5321838B2/ja
Priority to HK304/79A priority patent/HK30479A/xx
Priority to MY221/79A priority patent/MY7900221A/xx
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP2317573A 1973-02-28 1973-02-28 Expired JPS5321838B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2317573A JPS5321838B2 (ja) 1973-02-28 1973-02-28
GB890874A GB1438232A (en) 1973-02-28 1974-02-27 Semiconductor protective elements
US05/446,793 US4080616A (en) 1973-02-28 1974-02-28 Electrostatic puncture preventing element
HK304/79A HK30479A (en) 1973-02-28 1979-05-10 Improvements in semiconductor protective elements
MY221/79A MY7900221A (en) 1973-02-28 1979-12-30 Improvements w semiconductor protective elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2317573A JPS5321838B2 (ja) 1973-02-28 1973-02-28

Publications (2)

Publication Number Publication Date
JPS49114380A JPS49114380A (ja) 1974-10-31
JPS5321838B2 true JPS5321838B2 (ja) 1978-07-05

Family

ID=12103283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2317573A Expired JPS5321838B2 (ja) 1973-02-28 1973-02-28

Country Status (5)

Country Link
US (1) US4080616A (ja)
JP (1) JPS5321838B2 (ja)
GB (1) GB1438232A (ja)
HK (1) HK30479A (ja)
MY (1) MY7900221A (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630703B2 (ja) * 1973-05-02 1981-07-16
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
US4228450A (en) * 1977-10-25 1980-10-14 International Business Machines Corporation Buried high sheet resistance structure for high density integrated circuits with reach through contacts
DE2834719A1 (de) * 1978-08-08 1980-02-14 Siemens Ag Halbleitervorrichtung mit mehreren in einem halbleiterkristall vereinigten und eine integrierte schaltung bildenden halbleiterelementen mit pn-uebergaengen
JPS55128857A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Integrated circuit device
JPS5690553A (en) * 1979-12-21 1981-07-22 Nec Corp Preventive circuit for electrostatic breakdown
JPS5691478A (en) * 1979-12-26 1981-07-24 Hitachi Ltd Manufacture of punch-through type diode
JPS5696851A (en) * 1979-12-27 1981-08-05 Fujitsu Ltd Static breakdown preventive element
US4302792A (en) * 1980-06-26 1981-11-24 Rca Corporation Transistor protection circuit
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
JPS5967670A (ja) * 1982-10-12 1984-04-17 Toshiba Corp 半導体装置
JPS59200454A (ja) * 1983-04-27 1984-11-13 Nec Corp 静電破壊保護素子
JPS60247940A (ja) * 1984-05-23 1985-12-07 Hitachi Ltd 半導体装置およびその製造方法
US4763184A (en) * 1985-04-30 1988-08-09 Waferscale Integration, Inc. Input circuit for protecting against damage caused by electrostatic discharge
US5436496A (en) * 1986-08-29 1995-07-25 National Semiconductor Corporation Vertical fuse device
US4801558A (en) * 1986-09-12 1989-01-31 Texas Instruments Incorporated Electrostatic discharge protection using thin nickel fuse
DE4200884A1 (de) * 1991-01-16 1992-07-23 Micron Technology Inc Integrierte halbleiterschaltungsvorrichtung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210620A (en) * 1961-10-04 1965-10-05 Westinghouse Electric Corp Semiconductor device providing diode functions
GB1170705A (en) * 1967-02-27 1969-11-12 Hitachi Ltd An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same
GB1209271A (en) * 1967-02-27 1970-10-21 Hitachi Ltd Improvements in semiconductor devices
US3629667A (en) * 1969-03-14 1971-12-21 Ibm Semiconductor resistor with uniforms current distribution at its contact surface
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
JPS4840307B1 (ja) * 1970-06-12 1973-11-29
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device

Also Published As

Publication number Publication date
JPS49114380A (ja) 1974-10-31
MY7900221A (en) 1979-12-31
GB1438232A (en) 1976-06-03
HK30479A (en) 1979-05-18
US4080616A (en) 1978-03-21

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