JPS5317390B2 - - Google Patents

Info

Publication number
JPS5317390B2
JPS5317390B2 JP3319173A JP3319173A JPS5317390B2 JP S5317390 B2 JPS5317390 B2 JP S5317390B2 JP 3319173 A JP3319173 A JP 3319173A JP 3319173 A JP3319173 A JP 3319173A JP S5317390 B2 JPS5317390 B2 JP S5317390B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3319173A
Other versions
JPS49122670A (ja
Inventor
Kousi Nomura
Satoru Kawazu
Yoshihiko Hirose
Isao Inoue
Yoshihiko Watari
Koichi Kijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3319173A priority Critical patent/JPS5317390B2/ja
Priority to US05/451,383 priority patent/US3966501A/en
Priority to NL7403940.A priority patent/NL161302C/xx
Priority to FR7409931A priority patent/FR2222754B1/fr
Priority to DE2414033A priority patent/DE2414033C3/de
Priority to GB1317974A priority patent/GB1469436A/en
Priority to IT20903/74A priority patent/IT1007685B/it
Publication of JPS49122670A publication Critical patent/JPS49122670A/ja
Publication of JPS5317390B2 publication Critical patent/JPS5317390B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
JP3319173A 1973-03-23 1973-03-23 Expired JPS5317390B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP3319173A JPS5317390B2 (ja) 1973-03-23 1973-03-23
US05/451,383 US3966501A (en) 1973-03-23 1974-03-14 Process of producing semiconductor devices
NL7403940.A NL161302C (nl) 1973-03-23 1974-03-22 Werkwijze voor het vervaardigen van een halfgeleiderin- richting.
FR7409931A FR2222754B1 (ja) 1973-03-23 1974-03-22
DE2414033A DE2414033C3 (de) 1973-03-23 1974-03-22 Verfahren zur Herstellung von Halbleitervorrichtungen mit selektiv auf einer Oberfläche eines Halbleitersubstrats angeordneten Schichten aus einem Oxid des Substratmaterials
GB1317974A GB1469436A (en) 1973-03-23 1974-03-25 Process for producing semiconductor devices
IT20903/74A IT1007685B (it) 1973-03-23 1974-04-08 Procedimento per la produzione di dispositivi semiconduttori

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3319173A JPS5317390B2 (ja) 1973-03-23 1973-03-23

Publications (2)

Publication Number Publication Date
JPS49122670A JPS49122670A (ja) 1974-11-22
JPS5317390B2 true JPS5317390B2 (ja) 1978-06-08

Family

ID=12379580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3319173A Expired JPS5317390B2 (ja) 1973-03-23 1973-03-23

Country Status (1)

Country Link
JP (1) JPS5317390B2 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6116530A (ja) * 1984-07-03 1986-01-24 Matsushita Electronics Corp 半導体装置の製造方法
JPH01259538A (ja) * 1988-04-11 1989-10-17 Agency Of Ind Science & Technol 酸化膜の形成方法
JP2726502B2 (ja) * 1989-08-10 1998-03-11 株式会社東芝 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509390A (ja) * 1973-05-22 1975-01-30

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509390A (ja) * 1973-05-22 1975-01-30

Also Published As

Publication number Publication date
JPS49122670A (ja) 1974-11-22

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