JPS53148990A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS53148990A
JPS53148990A JP6417177A JP6417177A JPS53148990A JP S53148990 A JPS53148990 A JP S53148990A JP 6417177 A JP6417177 A JP 6417177A JP 6417177 A JP6417177 A JP 6417177A JP S53148990 A JPS53148990 A JP S53148990A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
lowering
npn transistor
current amplifying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6417177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6114673B2 (enrdf_load_stackoverflow
Inventor
Shuichi Kato
Kenji Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6417177A priority Critical patent/JPS53148990A/ja
Publication of JPS53148990A publication Critical patent/JPS53148990A/ja
Publication of JPS6114673B2 publication Critical patent/JPS6114673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Static Random-Access Memory (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP6417177A 1977-05-31 1977-05-31 Semiconductor memory device Granted JPS53148990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6417177A JPS53148990A (en) 1977-05-31 1977-05-31 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6417177A JPS53148990A (en) 1977-05-31 1977-05-31 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS53148990A true JPS53148990A (en) 1978-12-26
JPS6114673B2 JPS6114673B2 (enrdf_load_stackoverflow) 1986-04-19

Family

ID=13250339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6417177A Granted JPS53148990A (en) 1977-05-31 1977-05-31 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS53148990A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6114673B2 (enrdf_load_stackoverflow) 1986-04-19

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