JPS531468A - Formation of semiconductor electrode - Google Patents

Formation of semiconductor electrode

Info

Publication number
JPS531468A
JPS531468A JP7628476A JP7628476A JPS531468A JP S531468 A JPS531468 A JP S531468A JP 7628476 A JP7628476 A JP 7628476A JP 7628476 A JP7628476 A JP 7628476A JP S531468 A JPS531468 A JP S531468A
Authority
JP
Japan
Prior art keywords
formation
semiconductor electrode
taking
protective film
opening hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7628476A
Other languages
Japanese (ja)
Other versions
JPS5532213B2 (en
Inventor
Kazuhisa Murata
Hiroshi Hayashi
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP7628476A priority Critical patent/JPS531468A/en
Publication of JPS531468A publication Critical patent/JPS531468A/en
Publication of JPS5532213B2 publication Critical patent/JPS5532213B2/ja
Granted legal-status Critical Current

Links

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To form the layer electrode part of low resistance not causing open wire, by opening the opening hole on the protective film coated on the semiconductor base, performing heat treatment after coating the layer electrode material including a trace of Zn taking Au as main material on the entire surface, and taking in the electrode material on the protective film in the opening hole.
COPYRIGHT: (C)1978,JPO&Japio
JP7628476A 1976-06-25 1976-06-25 Formation of semiconductor electrode Granted JPS531468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7628476A JPS531468A (en) 1976-06-25 1976-06-25 Formation of semiconductor electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7628476A JPS531468A (en) 1976-06-25 1976-06-25 Formation of semiconductor electrode

Publications (2)

Publication Number Publication Date
JPS531468A true JPS531468A (en) 1978-01-09
JPS5532213B2 JPS5532213B2 (en) 1980-08-23

Family

ID=13600992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7628476A Granted JPS531468A (en) 1976-06-25 1976-06-25 Formation of semiconductor electrode

Country Status (1)

Country Link
JP (1) JPS531468A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54156493A (en) * 1978-05-31 1979-12-10 Toshiba Corp Forming method of compound semiconductor light emitting element electrode

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598847U (en) * 1982-07-08 1984-01-20 日産自動車株式会社 Vehicle lighting system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54156493A (en) * 1978-05-31 1979-12-10 Toshiba Corp Forming method of compound semiconductor light emitting element electrode
JPS6262076B2 (en) * 1978-05-31 1987-12-24 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS5532213B2 (en) 1980-08-23

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