JPS53146577A - Mos and mis electrostatic induction fet transistor - Google Patents
Mos and mis electrostatic induction fet transistorInfo
- Publication number
- JPS53146577A JPS53146577A JP175677A JP175677A JPS53146577A JP S53146577 A JPS53146577 A JP S53146577A JP 175677 A JP175677 A JP 175677A JP 175677 A JP175677 A JP 175677A JP S53146577 A JPS53146577 A JP S53146577A
- Authority
- JP
- Japan
- Prior art keywords
- mis
- mos
- electrostatic induction
- fet transistor
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000006698 induction Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52001756A JPS5856270B2 (ja) | 1977-01-11 | 1977-01-11 | 絶縁ゲ−ト型静電誘導電界効果トランジスタ |
DE19782801085 DE2801085A1 (de) | 1977-01-11 | 1978-01-11 | Statischer induktionstransistor |
US06/814,030 US4814839A (en) | 1977-01-11 | 1985-12-23 | Insulated gate static induction transistor and integrated circuit including same |
US07/225,870 US4994872A (en) | 1977-01-11 | 1988-07-29 | Insulated gate static induction transistor and integrated circuit including same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52001756A JPS5856270B2 (ja) | 1977-01-11 | 1977-01-11 | 絶縁ゲ−ト型静電誘導電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53146577A true JPS53146577A (en) | 1978-12-20 |
JPS5856270B2 JPS5856270B2 (ja) | 1983-12-14 |
Family
ID=11510415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52001756A Expired JPS5856270B2 (ja) | 1977-01-11 | 1977-01-11 | 絶縁ゲ−ト型静電誘導電界効果トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5856270B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5768075A (en) * | 1980-10-16 | 1982-04-26 | Nippon Gakki Seizo Kk | Manufacture of integrated circuit device |
JPS57211277A (en) * | 1981-06-23 | 1982-12-25 | Seiko Instr & Electronics Ltd | Insulating gate type electrostatic induction transistor and manufacture thereof |
JPS60207368A (ja) * | 1984-03-31 | 1985-10-18 | Res Dev Corp Of Japan | 相補型mos集積回路の製造方法 |
US4931850A (en) * | 1985-07-05 | 1990-06-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device including a channel stop region |
JPH02205362A (ja) * | 1988-12-28 | 1990-08-15 | American Teleph & Telegr Co <Att> | GaAs集積回路およびその製造方法 |
-
1977
- 1977-01-11 JP JP52001756A patent/JPS5856270B2/ja not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5768075A (en) * | 1980-10-16 | 1982-04-26 | Nippon Gakki Seizo Kk | Manufacture of integrated circuit device |
JPS57211277A (en) * | 1981-06-23 | 1982-12-25 | Seiko Instr & Electronics Ltd | Insulating gate type electrostatic induction transistor and manufacture thereof |
JPS60207368A (ja) * | 1984-03-31 | 1985-10-18 | Res Dev Corp Of Japan | 相補型mos集積回路の製造方法 |
JPH0519312B2 (ja) * | 1984-03-31 | 1993-03-16 | Shingijutsu Jigyodan | |
US4931850A (en) * | 1985-07-05 | 1990-06-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device including a channel stop region |
JPH02205362A (ja) * | 1988-12-28 | 1990-08-15 | American Teleph & Telegr Co <Att> | GaAs集積回路およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5856270B2 (ja) | 1983-12-14 |
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