JPS5312272A - Glass covering method of semiconductor element - Google Patents

Glass covering method of semiconductor element

Info

Publication number
JPS5312272A
JPS5312272A JP8678376A JP8678376A JPS5312272A JP S5312272 A JPS5312272 A JP S5312272A JP 8678376 A JP8678376 A JP 8678376A JP 8678376 A JP8678376 A JP 8678376A JP S5312272 A JPS5312272 A JP S5312272A
Authority
JP
Japan
Prior art keywords
semiconductor element
covering method
glass covering
powder
comprosing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8678376A
Other languages
Japanese (ja)
Other versions
JPS5433113B2 (en
Inventor
Masaru Shinpo
Katsujiro Tanzawa
Mikiko Negishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8678376A priority Critical patent/JPS5312272A/en
Publication of JPS5312272A publication Critical patent/JPS5312272A/en
Publication of JPS5433113B2 publication Critical patent/JPS5433113B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To reduce leakage current by covering semiconductor elements using an organic solvent system comprosing dispersing of glass powder of a coefficient of thermal expansion of 48×10-7 /° C and under without containing alkali metal oins and transition metal ions and Mg compound of 2×10-6to 2×10-4 moles per g of this powder.
COPYRIGHT: (C)1978,JPO&Japio
JP8678376A 1976-07-21 1976-07-21 Glass covering method of semiconductor element Granted JPS5312272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8678376A JPS5312272A (en) 1976-07-21 1976-07-21 Glass covering method of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8678376A JPS5312272A (en) 1976-07-21 1976-07-21 Glass covering method of semiconductor element

Publications (2)

Publication Number Publication Date
JPS5312272A true JPS5312272A (en) 1978-02-03
JPS5433113B2 JPS5433113B2 (en) 1979-10-18

Family

ID=13896341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8678376A Granted JPS5312272A (en) 1976-07-21 1976-07-21 Glass covering method of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5312272A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556806A (en) * 1978-06-29 1980-01-18 Toshiba Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556806A (en) * 1978-06-29 1980-01-18 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5433113B2 (en) 1979-10-18

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