JPS53114742A - Plasma ashing method - Google Patents

Plasma ashing method

Info

Publication number
JPS53114742A
JPS53114742A JP2932777A JP2932777A JPS53114742A JP S53114742 A JPS53114742 A JP S53114742A JP 2932777 A JP2932777 A JP 2932777A JP 2932777 A JP2932777 A JP 2932777A JP S53114742 A JPS53114742 A JP S53114742A
Authority
JP
Japan
Prior art keywords
plasma ashing
ashing method
carry out
plasma
hydrogen plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2932777A
Other languages
English (en)
Other versions
JPS5847466B2 (ja
Inventor
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2932777A priority Critical patent/JPS5847466B2/ja
Publication of JPS53114742A publication Critical patent/JPS53114742A/ja
Publication of JPS5847466B2 publication Critical patent/JPS5847466B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP2932777A 1977-03-18 1977-03-18 プラズマアッシング方法 Expired JPS5847466B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2932777A JPS5847466B2 (ja) 1977-03-18 1977-03-18 プラズマアッシング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2932777A JPS5847466B2 (ja) 1977-03-18 1977-03-18 プラズマアッシング方法

Publications (2)

Publication Number Publication Date
JPS53114742A true JPS53114742A (en) 1978-10-06
JPS5847466B2 JPS5847466B2 (ja) 1983-10-22

Family

ID=12273126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2932777A Expired JPS5847466B2 (ja) 1977-03-18 1977-03-18 プラズマアッシング方法

Country Status (1)

Country Link
JP (1) JPS5847466B2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123726A (ja) * 1982-01-18 1983-07-23 Toshiba Corp レジストの灰化方法
JPH0249425A (ja) * 1987-08-28 1990-02-19 Toshiba Corp 有機化合物膜の除去方法及び除去装置
US6232237B1 (en) 1997-12-12 2001-05-15 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
JP2007043079A (ja) * 2005-06-29 2007-02-15 Shibaura Mechatronics Corp プラズマ発生装置、プラズマ発生方法及びプラズマ処理装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010053214A1 (de) * 2010-12-03 2012-06-06 Evonik Degussa Gmbh Verfahren zur Wasserstoffpassivierung von Halbleiterschichten

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123726A (ja) * 1982-01-18 1983-07-23 Toshiba Corp レジストの灰化方法
JPH0249425A (ja) * 1987-08-28 1990-02-19 Toshiba Corp 有機化合物膜の除去方法及び除去装置
US6232237B1 (en) 1997-12-12 2001-05-15 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
JP2007043079A (ja) * 2005-06-29 2007-02-15 Shibaura Mechatronics Corp プラズマ発生装置、プラズマ発生方法及びプラズマ処理装置

Also Published As

Publication number Publication date
JPS5847466B2 (ja) 1983-10-22

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