JPS5299080A - Charge transfer type semiconductor device - Google Patents

Charge transfer type semiconductor device

Info

Publication number
JPS5299080A
JPS5299080A JP1565776A JP1565776A JPS5299080A JP S5299080 A JPS5299080 A JP S5299080A JP 1565776 A JP1565776 A JP 1565776A JP 1565776 A JP1565776 A JP 1565776A JP S5299080 A JPS5299080 A JP S5299080A
Authority
JP
Japan
Prior art keywords
transfer type
charge transfer
semiconductor device
type semiconductor
despite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1565776A
Other languages
Japanese (ja)
Inventor
Michihiro Yamada
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1565776A priority Critical patent/JPS5299080A/en
Publication of JPS5299080A publication Critical patent/JPS5299080A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To stably inject fat zero charge to each charge transfer type shift register despite existence of any variation in threshold voltages and despite any change in the waveforms of transfer clocks.
JP1565776A 1976-02-16 1976-02-16 Charge transfer type semiconductor device Pending JPS5299080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1565776A JPS5299080A (en) 1976-02-16 1976-02-16 Charge transfer type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1565776A JPS5299080A (en) 1976-02-16 1976-02-16 Charge transfer type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5299080A true JPS5299080A (en) 1977-08-19

Family

ID=11894790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1565776A Pending JPS5299080A (en) 1976-02-16 1976-02-16 Charge transfer type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5299080A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4327117Y1 (en) * 1966-10-21 1968-11-09
JPS4991497A (en) * 1972-12-19 1974-08-31
JPS5081378A (en) * 1973-11-19 1975-07-02

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4327117Y1 (en) * 1966-10-21 1968-11-09
JPS4991497A (en) * 1972-12-19 1974-08-31
JPS5081378A (en) * 1973-11-19 1975-07-02

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