JPS5294071A - Method of making contact between metal and semiconductor injected with high density current - Google Patents

Method of making contact between metal and semiconductor injected with high density current

Info

Publication number
JPS5294071A
JPS5294071A JP960777A JP960777A JPS5294071A JP S5294071 A JPS5294071 A JP S5294071A JP 960777 A JP960777 A JP 960777A JP 960777 A JP960777 A JP 960777A JP S5294071 A JPS5294071 A JP S5294071A
Authority
JP
Japan
Prior art keywords
metal
high density
making contact
density current
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP960777A
Other languages
English (en)
Japanese (ja)
Inventor
Shiriru Mutoo Pooru
Monteru Jiyatsuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS5294071A publication Critical patent/JPS5294071A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P76/2042—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D64/0116—
    • H10D64/0124—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H10P50/20—
    • H10P76/2045—
    • H10P95/50—

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP960777A 1976-01-30 1977-01-31 Method of making contact between metal and semiconductor injected with high density current Pending JPS5294071A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7602588A FR2339956A1 (fr) 1976-01-30 1976-01-30 Procede de realisation de contacts " metal-semiconducteur " a grande densite d'injection, et dispositifs obtenus par ledit procede

Publications (1)

Publication Number Publication Date
JPS5294071A true JPS5294071A (en) 1977-08-08

Family

ID=9168581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP960777A Pending JPS5294071A (en) 1976-01-30 1977-01-31 Method of making contact between metal and semiconductor injected with high density current

Country Status (4)

Country Link
JP (1) JPS5294071A (enExample)
DE (1) DE2703322A1 (enExample)
FR (1) FR2339956A1 (enExample)
GB (1) GB1539294A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025306B1 (enExample) * 1968-04-04 1975-08-22
DE2111089A1 (de) * 1970-03-10 1971-09-23 Westinghouse Electric Corp Verfahren zur Herstellung eines Halbleiterschaltelementes

Also Published As

Publication number Publication date
FR2339956A1 (fr) 1977-08-26
GB1539294A (en) 1979-01-31
DE2703322A1 (de) 1977-08-04
FR2339956B1 (enExample) 1979-07-13

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